Datasheet > GTRA384802FC-V1-R2

GTRA384802FC-V1-R2

更新时间： 2024-11-22 02:51:47

品牌	Logo	应用领域
科锐 - CREE		/
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描述
Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 â 3800 MHz

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Advance GTRA384802FC

Thermally-Enhanced High Power RF GaN on SiC HEMT

400 W, 48 V, 3600 – 3800 MHz

Advance Specification Data

Sheets describe products that are

being considered by Wolfspeed for

development and market intro-

duction. The target performance

shown in Advance Specifications

is not ﬁnal and should not be used

for any design activity. Please

contact Wolfspeed about the fu-

ture availability of these products.

Description

The GTRA384802FC is a 400-watt (P ) GaN on SiC high electron mobil-

3dB

ity transistor (HEMT) for use in multi-standard cellular power ampliﬁer

applications. It features input matching, high eﬀiciency, and a thermally-

enhanced package with earless ﬂange.

Features

•

GaN on SiC HEMT technology

Input and output matched

Asymmetrical Doherty design

- Main: P

- Peak: P

= 230 W Typ

= 360 W Typ

3dB

•

Typical Pulsed CW performance, 3800 MHz, 48 V, combined outputs,

Doherty @ P , 10 µs, 10% duty cycle

3dB

- Output power = 400 W

- Drain eﬀiciency = 62%

- Gain = 12 dB

GTRA384802FC

Package H-37248C-4

Pb-free and RoHS compliant

Target RF Characteristics

Single-carrier WCDMA Speciﬁcations (tested in Wolfspeed Doherty test ﬁxture)

= 48 V, I = 250 mA, P

= 63 W avg, V

= –6 V, ƒ = 3800 MHz, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01%

OUT

GSPEAK

CCDF

Characteristic

Gain

Symbol

Min

—

Typ

13.7

Max

—

Unit

Drain Eﬀiciency

h_D

—

Adjacent Channel Power Ratio

Output PAR @ 0.01% CCDF

ACPR

OPAR

—

–31

7.5

—

dBc

—

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Rev. 01, 2019-01-23

4600 Silicon Drive

Durham, NC 27703

www.wolfspeed.com

12 3 4 5

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