GTRA412852FC
Thermally-Enhanced High Power RF GaN on SiC HEMT
235 W, 48 V, 3700 – 4100 MHz
Description
The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron
mobility transistor (HEMT) for use in multi-standard cellular power
amplifier applications. It features input and output matching, high
efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37248C-4
Single-carrier WCDMA Drive-up
Features
VDD = 48 V, IDQ(MAIN) = 144 mA,
V
GS(PEAK) = –6.0 V, ƒ = 4100 MHz,
•
•
•
GaN on SiC HEMT technology
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
Input and output matched
24
20
16
12
8
60
40
20
0
Typical pulsed CW performance, 4100 MHz, 48 V,
10 µs pulse width, 100 µs PP
- Output power at P3dB = 235 W
- Gain = 10 dB
Efficiency
Gain
- Efficiency = 45%
•
•
Capable of handling 10:1 VSWR @48 V, 30 W
(WCDMA) output power
Human Body Model Class 1A (per ANSI/ESDA/
JEDEC JS-001)
-20
-40
-60
4
•
•
Low thermal resistance
PAR @ 0.01% CCDF
Pb-free and RoHS compliant
gtra412852fc-gr1a
0
27
32
37
42
47
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (tested in the Doherty production test fixture)
VDD = 48 V, IDQ = 144 mA, POUT = 30 W avg, VGS(PEAK) = –6 V, ƒ = 4100 MHz, 3GPP, channel bandwidth = 3.84 MHz, peak/average =
10 dB @ 0.01% CCDF
Characteristic
Symbol
Gps
Min.
10
Typ.
11.5
39
Max.
—
Unit
dB
Gain
Drain Efficiency
hD
34.5
—
—
%
Adjacent Channel Power Ratio
Output PAR @ 0.01% CCDF
ACPR
OPAR
–29
8
–24
—
dBc
dB
7
Note:
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
Rev. 03.1, 2022-1-27
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