GTRB424908FC/1
Thermally-Enhanced High Power RF GaN on SiC HEMT
450 W, 48 V, 3700 – 4000 MHz
Description
The GTRB424908FC/1 is a 450-watt (P3dB) GaN on SiC high electron
mobility transistor (HEMT) designed for use in multi-standard
cellular power amplifier applications. It features high efficiency, and
a thermally-enhanced package with earless flange.
Package Types: H-37248KC-6/2
Single-carrier WCDMA Drive-up
Features
VDD = 48 V, IDQ(Main) = 250 mA, VGS(Peak) = -5 V,
ƒ = 4000 MHz, 3GPP WCDMA signal,
•
•
GaN on SiC HEMT technology
PAR = 10 dB, 3.84 MHz BW
Typical Pulsed CW performance, 3800 MHz, 48 V,
100 µs pulse width, 10% duty cycle, combined
outputs
- Output power at P3dB = 450 W
- Efficiency at P3dB = 61%
40
35
30
25
20
15
10
5
80
60
40
20
0
Efficiency
•
•
Human Body Model Class 1C (per ANSI/ESDA/
JEDEC JS-001)
Pb-free and RoHS compliant
Gain
-20
-40
-60
-80
PAR @ 0.01% CCDF
0
gtrb424908fc_g1
25
30
35
40
45
50
55
Average Output Power (dBm)
Typical RF Characteristics
Single-carrier WCDMA Specifications (tested in the Doherty evaluation board for 3700 – 4000 MHz)
VDD = 48 V, IDQ = 250 mA, POUT = 56.2 W, VGS(PEAK) = –5 V, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF
POUT
(dBM)
Gain
(dB)
Efficiency
ACPR +
(dBc)
ACPR –
(dBc)
OPAR
(dB)
(%)
3700 MHz
3800 MHz
3900 MHz
4000 MHz
47.5
47.5
47.5
47.5
12.4
12.7
12.8
12.4
42.4
40.4
40.7
41.7
–33.7
–38.0
–35.8
–32.5
–33.8
–38.2
–35.7
–35.5
8.2
8.5
8.6
8.5
Note:
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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Rev. 02.1, 2022-1-27
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