Datasheet > GTRB204402FC

GTRB204402FC

更新时间： 2024-03-03 10:09:54

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
10页	904K
描述
High Power RF GaN-on-SiC HEMT 350 W, 48 V, 1930 - 2020 MHz

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GTRB204402FC 数据手册

GTRB204402FC/1

Thermally-Enhanced High Power RF GaN on SiC HEMT

350 W, 48 V, 1930 – 2020 MHz

Description

The GTRB204402FC/1 is a 350-watt (P3dB) GaN on SiC

high electron mobility transistor (HEMT) designed for use

in multi-standard cellular power ampliﬁer applications. It

features high eﬀiciency, and a thermally-enhanced package

with earless ﬂange.

Package Types: H-37248C-4

Single-carrier WCDMA Drive-up

V_DD= 48 V, I_DQ(Main)= 150 mA, V_GS(Peak)= -5.5 V,

Features

ƒ = 2020 MHz, 3GPP WCDMA signal,

•

GaN on SiC HEMT technology

Typical Pulsed CW performance, 2020 MHz, 48

PAR = 10 dB, 3.84 MHz BW

V, 10 µs pulse width, 10% duty cycle, combined

outputs

- Output power at P_3dB= 350 W

- Eﬀiciency at P_3dB= 65%

Efficiency

•

Human Body Model Class 1C (per ANSI/ESDA/JE-

DEC JS-001)

Gain

Pb-free and RoHS compliant

-20

-40

-60

-80

PAR @ 0.01% CCDF

GTRB204402FC_g1

Average Output Power (dBm)

Typical RF Characteristics

Single-carrier WCDMA Speciﬁcations (tested in the Doherty evaluation board for 1930 to 2020 MHz)

V_DD= 48 V, I_DQ= 150 mA, V_GS(PEAK)= –5.5 V, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF

P_OUT

(dBM)

Gain

(dB)

Eﬀiciency

ACPR+

(dBc)

ACPR–

(dBc)

OPAR

(dB)

(%)

1930 MHz

1975 MHz

2020 MHz

47.5

15.9

59.7

61.5

–27.2

–27.1

–26.6

–27.4

–27.2

–26.6

8.6

8.7

8.1

16.1

Note:

All published data at T_CASE= 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 02.1, 2022-09-18

For further information and support please visit:

https://www.macom.com/support

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