GTRB384608FC
Thermally-Enhanced High Power RF GaN on SiC HEMT
400 W, 48 V, 3300 – 3800 MHz
Description
The GTRB384608FC is a 400-watt (P3dB) GaN on SiC high electron mobility
transistor (HEMT) designed for use in multi-standard cellular power
amplifier applications. It features high efficiency, and a thermally-enhanced
package with earless flange.
Package Type: H-37248KC-6/2
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(Main) = 1000 mA, VGS(Peak) = –4.5 V,
ƒ = 3700 MHz, 3GPP WCDMA signal, PAR = 10 dB,
Features
3.84 MHz BW
•
•
GaN on SiC HEMT technology
Typical pulsed CW performance, 3500 MHz, 48 V,
10 µs pulse width, 10% duty cycle, combined
outputs
- Output Power at P3dB = 400 W
- Efficiency at P3dB = 69%
40
35
30
25
20
15
10
5
80
60
40
20
0
Efficiency
•
•
Human Body Model Class 1C (per ANSI/ESDA/JEDEC
JS-001)
Gain
Pb-free and RoHS compliant
-20
-40
-60
-80
PAR @ 0.01% CCDF
0
25
30
35
40
45
50
55
Average Output Power (dBm)
Typical RF Characteristics
Single-carrier WCDMA Specifications (tested in the Doherty evaluation board for 3300 to 3700 MHz)
VDD = 48 V, IDQ = 1000 mA, POUT = 47.5 dBm, VGS(PEAK) = –4.5 V, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF
POUT
(dBM)
Gain
(dB)
Efficiency
ACPR+
(dBc)
ACPR–
(dBc)
OPAR
(dB)
(%)
3300 MHz
3400 MHz
3500 MHz
3600 MHz
3700 MHz
47.5
47.5
47.5
47.5
47.5
12.2
13.4
14.0
13.6
13.1
43.2
41.4
43.2
42.7
43.0
-29.4
-30.5
-33.6
-38.7
-39.8
-29.7
-30.7
-34.2
-39.3
-40.4
8.7
9.0
8.7
8.7
8.7
Note:
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
1
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Rev. 03, 2023-01-18
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