Datasheet > GTRB226002FC-V1

GTRB226002FC-V1

更新时间： 2024-11-22 17:02:11

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
9页	1961K
描述
High Power RF GaN-on-SiC HEMT 450 W, 48 V, 2110 - 2200 MHz

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GTRB226002FC-V1 数据手册

GTRB226002FC

Thermally-Enhanced High Power RF GaN on SiC HEMT

450 W, 48 V, 2110 – 2200 MHz

Description

The GTRB226002FC is a 450-watt (P_3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

amplifier applications. It features high efficiency, and a thermally-

enhanced package with earless flange.

Package Types: H-37248C-4

PN: GTRB226002FC

Single-carrier WCDMA Drive-up

Features

•

GaN on SiC HEMT technology

Typical pulsed CW performance: 10 μs pulse width,

10% duty cycle, 2200 MHz, 48 V, Doherty fixture

- Efficiency = 65%

- Gain = 14 dB

- Output power at P_3dB= 450 W

•

Human Body Model Class 1B (per ANSI/ESDA/JEDEC

JS-001)

•

Low thermal resistance

Pb-free and RoHS compliant

-20

-40

-60

Typical RF Characteristics

Single-carrier WCDMA Speci ications (tested in the evaluation board for 2110 – 2200 MHz)

V_DD= 48 V, I_DQ= 300 mA, V_GS(PEAK)= –5.9 V, P_OUT= 80 Wavg,3GPP signal, channel bandwidth=3.84 MHz, input PAR = 10 dB @ 0.01% CCDF

P_OUT

(dBM)

Gain

(dB)

Efficiency

(%)

OPAR

(dB)

–ALT1

(dBc)

ALT1

(dBc)

2110

2155

2200

49.0

14.9

14.4

60.9

62.4

65.7

–27.1

–27.4

–27.0

–27.3

–27.1

All published data at T

= 25˚C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 05, 2022-03-18

For further information and support please visit:

https://www.macom.com/support

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