Datasheet > GJ3403

GJ3403

更新时间： 2024-09-17 03:39:23

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	228K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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GJ3403 数据手册

Pb Free Plating Product

ISSUED DATE :2005/02/25

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

-30V

200mꢀ

-10A

GJ3403

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GJ3403 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device.

The TO-252 package is universally used for commercial-industrial applications.

Features

*Simple Drive Requirement

*Lower Gate Charge

*Fast Switching

Package Dimensions

TO-252

Millimeter

Min.

0.50

2.20

0.45

0.90

5.40

0.80

REF.

Min.

Max.

6.80

5.50

7.20

3.00

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

6.40

5.20

6.80

2.40

2.30 REF.

0.70

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

Continuous Drain Current

Pulsed Drain Current¹

I_D@T

=25к

=70к

-10

-8.6

I_DM

-48

Total Power Dissipation

P_D@T

C=25к

36.7

Linear Derating Factor

0.29

W/к

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-case

Rthj-amb

Value

3.4

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

110

GJ3403

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