Datasheet > GJ35N03

GJ35N03

更新时间： 2024-11-26 03:39:23

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	226K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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GJ35N03 数据手册

Pb Free Plating Product

ISSUED DATE :2006/08/16

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

25V

13.5mꢀ

36A

GJ35N03

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GJ35N03 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-252 package is universally preferred for all commercial-industrial surface mount applications and

suited for low voltage applications such as DC/DC converters.

Features

*Dynamic dv/dt Rating

*Simple Drive Requirement

*Repetitive Avalanche Rated

*Fast Switching

Package Dimensions

TO-252

Millimeter

Min.

0.50

2.20

0.45

0.90

5.40

0.80

REF.

Min.

Max.

6.80

5.50

7.20

3.00

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

6.40

5.20

6.80

2.40

2.30 REF.

0.70

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

±20

Gate-Source Voltage

V_GS

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

=100к

150

Total Power Dissipation

Linear Derating Factor

0.4

W/к

Single Pulse Avalanche Energy²

Single Pulse Avalanche Current

Operating Junction and Storage Temperature Range

E_AS

I_AS

150

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-c

Value

2.5

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

GJ35N03

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