Datasheet > GJ405

GJ405

更新时间： 2024-11-23 03:39:23

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	254K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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GJ405 数据手册

Pb Free Plating Product

ISSUED DATE :2006/12/06

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

-30V

32mꢀ

-18A

GJ405

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GJ405 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate

resistance.

The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited

for high current load applications.

Features

*Simple Drive Requirement

*Lower On-resistance

*Fast Switching Characteristic

Package Dimensions

TO-252

Millimeter

Min.

0.50

2.20

0.45

0.90

5.40

0.80

REF.

Min.

Max.

6.80

5.50

7.20

3.00

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

6.40

5.20

6.80

2.40

2.30 REF.

0.70

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

-18

=100к

-14

-40

Total Power Dissipation

Linear Derating Factor

0.4

W/к

Single Pulse Avalanche Energy²

Single Pulse Avalanche Current

Operating Junction and Storage Temperature Range

E_AS

I_AS

-35

Tj, Tstg

-55 ~ +175

Thermal Data

Parameter

Symbol

Rthj-c

Value

2.5

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

GJ405

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