是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 8.77 |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 400 V |
配置: | SINGLE | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 2000 ns | 标称接通时间 (ton): | 900 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GT5G102 | TOSHIBA |
获取价格 |
TRANSISTOR,IGBT,N-CHAN,400V V(BR)CES,5A I(C),TO-251AA | |
GT5G102(2-7B5C) | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 400 V, N-CHANNEL IGBT, 2-7B5C, 3 PIN, Insulated Gate BIP Transistor | |
GT5G102(2-7B6C) | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 400 V, N-CHANNEL IGBT, 2-7B6C, 3 PIN, Insulated Gate BIP Transistor | |
GT5G103 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS) | |
GT5G103(2-7B5C) | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 400 V, N-CHANNEL IGBT, 2-7B5C, 3 PIN, Insulated Gate BIP Transistor | |
GT5G103(2-7B6C) | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 400 V, N-CHANNEL IGBT, 2-7B6C, 3 PIN, Insulated Gate BIP Transistor | |
GT5G103(SM) | TOSHIBA |
获取价格 |
TRANSISTOR TRANSISTOR,IGBT,N-CHAN,400V V(BR)CES,5A I(C),TO-252VAR, Insulated Gate BIP Tran | |
GT5G103_06 | TOSHIBA |
获取价格 |
STROBE FLASH APPLICATIONS | |
GT5G131 | TOSHIBA |
获取价格 |
Strobe Flash Applications | |
GT5G131_06 | TOSHIBA |
获取价格 |
Strobe Flash Applications |