Datasheet > GT5G134

GT5G134

更新时间： 2024-11-14 20:06:23

品牌	Logo	应用领域
东芝 - TOSHIBA		栅双极性晶体管
页数	文件大小	规格书
8页	214K
描述
TRANSISTOR IGBT, Insulated Gate BIP Transistor

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GT5G134 技术参数

GT5G134

Discrete IGBTs Silicon N-Channel IGBT

GT5G134

1. Applications

•

Dedicated to Photo-Flash Intensity Control Applications

•

Dedicated to High-Speed-Switching Photo Flash Applications

Note: The product(s) described herein should not be used for any other application.

2. Features

(1) Enhancement mode

(2) High-speed switching: tf = 0.6 µs (typ.) (IC = 110 A)

(3) 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 110 A)

(4) Peak collector current: ICP = 110 A (max)

(5) Built-in zener diode between gate and emitter

(6) SOP-8 package

3. Packaging and Internal Circuit

1,2,3: Emitter

4: Gate

5,6,7,8: Collector

SOP-8

2012-10-09

Rev.1.0

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
GT5G134(Q)	TOSHIBA	获取价格	GT5G134(Q)
GT5H-1PP-HU(10)	HRS	获取价格	Coaxial cable connection of Antennas, Sensors, and Communication Trunk Lines
GT5H-1PP-HU(41)	HRS	获取价格	Coaxial cable connection of Antennas, Sensors, and Communication Trunk Lines
GT5H-1PP-HU10	HRS	获取价格	Coaxial cable connection of Antennas, Sensors, and Communication Trunk Lines
GT5H-1PP-HU41	HRS	获取价格	Coaxial cable connection of Antennas, Sensors, and Communication Trunk Lines
GT5J301	TOSHIBA	获取价格	N CHANNEL IGBT (HIGH POWER SWITCHING MOTOR CONTROL APPLICATIONS)
GT5J301_07	TOSHIBA	获取价格	GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT5J311	TOSHIBA	获取价格	N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
GT5J311(SM)	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 5A I(C) \| TO-263AB
GT5J311SM	TOSHIBA	获取价格	N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)