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GT5G134(Q)

更新时间： 2024-11-14 20:46:35

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GT5G134(Q) 技术参数

GT5G134

Discrete IGBTs Silicon N-Channel IGBT

GT5G134

1. Applications

•

Dedicated to Photo-Flash Intensity Control Applications

•

Dedicated to High-Speed-Switching Photo Flash Applications

Note: The product(s) described herein should not be used for any other application.

2. Features

(1) Enhancement mode

(2) High-speed switching: tf = 0.6 µs (typ.) (IC = 110 A)

(3) 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 110 A)

(4) Peak collector current: ICP = 110 A (max)

(5) Built-in zener diode between gate and emitter

(6) SOP-8 package

3. Packaging and Internal Circuit

1,2,3: Emitter

4: Gate

5,6,7,8: Collector

SOP-8

Start of commercial production

2012-07

2014-01-07

Rev.2.0

12 3 4 5 6 7 8

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