Datasheet > GT5J321

GT5J321

更新时间： 2024-11-14 10:37:31

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
6页	163K
描述
High Power Switching Applications

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中文翻译

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数据手册

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GT5J321 数据手册

TOSHIBA

GT5J321

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT

Preliminary

GT5J321

High Power Switching Applications

Fast Switching Applications

●ꢀ

The 4th generation

Enhancement-mode

Fast Switching(FS)

●ꢀ

:Operating frequency up to 150kHz(Reference)

:t_f=0.05μs(typ.)

:E_on=0.12mJ(typ.)

●ꢀ

High speed

Low switching loss

●ꢀ

:E_off=0.10mJ(typ.)

●ꢀ

:V_CE(sat)=2.0V(typ.)

FRD included between emitter and collector

Low saturation voltage

Maximum Ratings (Ta=25℃)

Characteristic

Symbol

Ratings

Unit

V_CES

V_GES

I_C

Collector-emitter voltage

Gate-emitter voltage

600

±20

Collector current

I_CP

1ms

Emitter-collector

I_F

forward current

1ms

I_FM

Collector power dissipation

(Tc=25℃)

P_C

T_j

Junction temperature

Storage temperature range

150

℃

T_stg

-55～150

2001-6-

1/6

12 3 4 5 6

中文翻译

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