是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 5.64 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 400 V | 配置: | SINGLE WITH BUILT-IN DIODE |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 240 | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 2400 ns |
标称接通时间 (ton): | 1100 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GT5G103(2-7B5C) | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 400 V, N-CHANNEL IGBT, 2-7B5C, 3 PIN, Insulated Gate BIP Transistor | |
GT5G103(2-7B6C) | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 400 V, N-CHANNEL IGBT, 2-7B6C, 3 PIN, Insulated Gate BIP Transistor | |
GT5G103(SM) | TOSHIBA |
获取价格 |
TRANSISTOR TRANSISTOR,IGBT,N-CHAN,400V V(BR)CES,5A I(C),TO-252VAR, Insulated Gate BIP Tran | |
GT5G103_06 | TOSHIBA |
获取价格 |
STROBE FLASH APPLICATIONS | |
GT5G131 | TOSHIBA |
获取价格 |
Strobe Flash Applications | |
GT5G131_06 | TOSHIBA |
获取价格 |
Strobe Flash Applications | |
GT5G133 | TOSHIBA |
获取价格 |
Strobe Flash Applications | |
GT5G134 | TOSHIBA |
获取价格 |
TRANSISTOR IGBT, Insulated Gate BIP Transistor | |
GT5G134(Q) | TOSHIBA |
获取价格 |
GT5G134(Q) | |
GT5H-1PP-HU(10) | HRS |
获取价格 |
Coaxial cable connection of Antennas, Sensors, and Communication Trunk Lines |