Datasheet > GSS4565

GSS4565

更新时间： 2024-11-25 03:39:59

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
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描述
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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GSS4565 数据手册

Pb Free Plating Product

ISSUED DATE :2005/07/27

GTM

CORPORATION

REVISED DATE :2005/09/29B

N-CH BVDSS

40V

GSS4565

N-CH RDS(ON) 25mΩ

N-CH I

7.6A

-40V

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

P-CH BVDSS

N-CH RDS(ON) 33mΩ

N-CH

I -6.5A

Description

The GSS4565 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited

for low voltage applications such as DC/DC converters.

Features

*Simple Drive Requirement

*Lower On-resistance

*Fast Switching Performance

Package Dimensions

Millimeter

REF.

Min.

Max.

6.20

5.00

4.00

8̓

Min.

Max.

0.25

0.49

1.75

5.80

4.80

3.80

0̓

0.10

0.35

1.35

0.375 REF.

45̓

1.27 TYP.

0.40

0.19

0.90

0.25

Absolute Maximum Ratings

Ratings

N-channel P-channel

Parameter

Symbol

Unit

Drain-Source Voltage

V_DS

V_GS

f20

7.6

-40

f20

-6.5

-5.2

-30

Gate-Source Voltage

Continuous Drain Current³

Pulsed Drain Current¹

I_D@T

=25к

=70к

I_DM

P_D@T

=25к

Total Power Dissipation

2.0

W/ć

Linear Derating Factor

0.016

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-ambient³Max.

Rthj-a

62.5

ć/W

GSS4565

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