Datasheet > GSS4957

GSS4957

更新时间： 2024-02-26 21:43:37

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	318K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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GSS4957 数据手册

Pb Free Plating Product

ISSUED DATE :2005/08/01

GTM

CORPORATION

REVISED DATE :2005/09/29B

BVDSS

DS(ON)

-30V

24mΩ

-7.7A

GSS4957

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GSS4957 provide the designer with the best combination of fast switching, ruggedized device design, ultra

low on-resistance and cost-effectiveness.

Features

*Low On-Resistance

*Simple Drive Requirement

*Dual P MOSFET Package

Package Dimensions

Millimeter

REF.

Min.

Max.

6.20

5.00

4.00

8̓

Min.

Max.

0.25

0.49

1.75

5.80

4.80

3.80

0̓

0.10

0.35

1.35

0.375 REF.

45̓

1.27 TYP.

0.40

0.19

0.90

0.25

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

V_DS

V_GS

-30

f20

-7.7

Gate-Source Voltage

Continuous Drain Current³

Pulsed Drain Current¹

I_D@T

=25к

=70к

-6.1

I_DM

-30

P_D@T

=25к

Total Power Dissipation

W/ć

Linear Derating Factor

0.016

-55 ~ +150

Operating Junction and Storage Temperature Range

Tj, Tstg

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-ambient³Max.

Rthj-amb

62.5

ć/W

GSS4957

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