5秒后页面跳转
GSS6900S PDF预览

GSS6900S

更新时间: 2024-02-18 12:12:16
品牌 Logo 应用领域
GTM 肖特基二极管
页数 文件大小 规格书
8页 540K
描述
DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE

GSS6900S 数据手册

 浏览型号GSS6900S的Datasheet PDF文件第2页浏览型号GSS6900S的Datasheet PDF文件第3页浏览型号GSS6900S的Datasheet PDF文件第4页浏览型号GSS6900S的Datasheet PDF文件第5页浏览型号GSS6900S的Datasheet PDF文件第6页浏览型号GSS6900S的Datasheet PDF文件第7页 
Pb Free Plating Product  
ISSUED DATE :2006/04/28  
REVISED DATE :  
GTM  
CORPORATION  
CH1 BVDSS  
30V  
GSS6900S  
N-CH RDS(ON) 30m  
N-CH I  
D
5.7A  
30V  
DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE  
CH2 BVDSS  
N-CH RDS(ON) 22mꢀ  
N-CH I 9.8A  
D
Description  
The GSS6900S provide the designer with the best combination of fast switching, ruggedized device design,  
low on-resistance and cost-effectiveness.  
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited  
for low voltage applications such as DC/DC converters.  
Features  
*Simple Drive Requirement  
*DC-DC Converter Suitable  
*Fast Switching Performance  
Package Dimensions  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
6.20  
5.00  
4.00  
8°  
Min.  
Max.  
0.25  
0.49  
1.75  
5.80  
4.80  
3.80  
0°  
0.10  
0.35  
1.35  
A
B
C
D
E
F
M
H
L
J
K
G
0.375 REF.  
0.40  
0.19  
0.90  
0.25  
45°  
1.27 TYP.  
Absolute Maximum Ratings  
Ratings  
Parameter  
Symbol  
Unit  
CH-1  
CH-2  
Drain-Source Voltage  
VDS  
VGS  
30  
30  
±20  
9.8  
7.8  
30  
V
V
Gate-Source Voltage  
±20  
5.7  
4.6  
20  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
ID @T  
ID @T  
A
=25к  
=70к  
A
A
A
IDM  
A
Total Power Dissipation  
PD @T  
A
=25к  
1.4  
0.01  
3.1  
0.02  
W
W/к  
к
Linear Derating Factor  
Operating Junction and Storage Temperature Range  
Tj, Tstg  
-55 ~ +150  
Thermal Data  
Value  
Parameter  
Symbol  
Unit  
Typ.  
70  
Max.  
90  
Thermal Resistance Junction-ambient3  
Thermal Resistance Junction-ambient3  
Thermal Resistance Junction-ambient3  
Rthj-a(CH-1)  
Rthj-a(CH-2)  
Rthj-a(Schottky  
к/W  
к/W  
к/W  
42  
40  
)
52  
60  
GSS4816S  
Page: 1/8  

与GSS6900S相关器件

型号 品牌 获取价格 描述 数据表
GSS6982 GTM

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSS8040 BL Galaxy Electrical

获取价格

40V,3A,General Purpose NPN Bipolar Transistor
GSS9510 GTM

获取价格

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSS9922E GTM

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSS9926 GTM

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSS9926E GTM

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSS9930 GTM

获取价格

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSS9936 GTM

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSS9960 GTM

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSS9962 GTM

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET