Datasheet > GSS6050P

GSS6050P

更新时间： 2024-11-26 17:01:07

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	532K
描述
50V,3A,Medium Power PNP Bipolar Transistor

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GSS6050P 数据手册

PNP Silicon Epitaxial Planar Transistor

GSS6050P

Features



Adoption of MBIT processes

Low collector-to-emitter saturation voltage

Fast switching speed

Large current capacity and wide ASO

Mechanical Data



Case: SOT-89

Molding compound, UL flammability classification rating 94V-0

Terminals: Matte tin plated leads, solderable per MIL-STD-202,

Method 208

SOT-89

Ordering Information

Part Number

Package

Shipping

Marking Code

GSS6050P

SOT-89

1000 pcs / Tape & Reel

6050

Maximum Ratings (@T_A=25℃ unless otherwise specified)

Symbol

Parameter

Value

Units

MAXIMUM RATINGS

Collector-Base Voltage

Collector-Emitter Voltage

V_CBO

V_CEO

V_EBO

I_C

-60

-50

-6

Emitter-Base Voltage

Collector Current - Continuous

Peak Pulse Current

-3

I_CM

-6

Thermal Characteristic

P_D

T_J

Power Dissipation Ta=25℃

℃

Junction Temperature

150

T_STG

Junction and Storage Temperature

-55 to +150

STM0207A: April 2019

www.gmesemi.com

12 3 4

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