Datasheet > GSS4955

GSS4955

更新时间： 2024-02-20 14:10:32

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	350K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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GSS4955 数据手册

Pb Free Plating Product

ISSUED DATE :2005/09/30

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

-20V

45mΩ

-5.6A

GSS4955

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GSS4955 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited

for low voltage applications such as DC/DC converters.

Features

*Low Gate Charge

*Simple Drive Requirement

*Fast Switching Characteristic

Package Dimensions

Millimeter

REF.

Min.

Max.

6.20

5.00

4.00

8̓

Min.

Max.

0.25

0.49

1.75

5.80

4.80

3.80

0̓

0.10

0.35

1.35

0.375 REF.

45̓

0.40

0.19

0.90

0.25

1.27 TYP.

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

V_DS

V_GS

-20

±20

Gate-Source Voltage

Continuous Drain Current³

Pulsed Drain Current¹

I_D@T

=25к

=70к

-5.6

-4.5

I_DM

-20

Total Power Dissipation

P_D@T

=25к

W/к

Linear Derating Factor

0.016

-55 ~ +150

Operating Junction and Storage Temperature Range

Tj, Tstg

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-ambient³Max.

Rthj-amb

62.5

к/W

GSS4955

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