Datasheet > GSS4953

GSS4953

更新时间： 2024-01-25 10:12:31

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
5页	309K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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GSS4953 数据手册

Pb Free Plating Product

ISSUED DATE :2006/01/19

REVISED DATE :2006/11/09D

GTM

CORPORATION

BVDSS

DS(ON)

-30V

53mꢀ

-5A

GSS4953

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GSS4953 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited

for low voltage applications such as DC/DC converters.

Features

*Simple Drive Requirement

*Lower On-resistance

*Fast Switching

Package Dimensions

Millimeter

REF.

Min.

Max.

6.20

5.00

4.00

8°

Min.

Max.

0.25

0.49

1.75

5.80

4.80

3.80

0°

0.10

0.35

1.35

0.375 REF.

0.40

0.19

0.90

0.25

45°

1.27 TYP.

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

V_DS

V_GS

-30

Gate-Source Voltage

±16

Continuous Drain Current¹

Pulsed Drain Current²

I_D@T

=25к

=70к

-5

-4

-20

I_DM

Total Power Dissipation¹

P_D@T

=25к

W/к

Linear Derating Factor

0.02

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-ambient¹Max.

Rthj-amb

62.5

к/W

GSS4953

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