是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Transferred | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.37 |
配置: | BRIDGE, 4 ELEMENTS | 二极管类型: | BRIDGE RECTIFIER DIODE |
最大正向电压 (VF): | 1 V | JESD-609代码: | e0 |
最大非重复峰值正向电流: | 80 A | 元件数量: | 4 |
最高工作温度: | 150 °C | 最大输出电流: | 2.3 A |
最大重复峰值反向电压: | 600 V | 子类别: | Bridge Rectifier Diodes |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GSIB4A60N-E3/1 | VISHAY |
获取价格 |
DIODE 2.3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge | |
GSIB4A80 | GULFSEMI |
获取价格 |
SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 4.0A | |
GSIB4A80 | VISHAY |
获取价格 |
Glass Passivated Single-In-Line Bridge Rectifier | |
GSIB4A80/1-E3 | VISHAY |
获取价格 |
BRIDGE RECTIFIER,1-PHASE FULL-WAVE,800V V(RRM),BR-7W | |
GSIB4A80/51 | VISHAY |
获取价格 |
DIODE 2.3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge | |
GSIB4A80/72-E3 | VISHAY |
获取价格 |
DIODE 2.3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge | |
GSIB4A80E3 | VISHAY |
获取价格 |
DIODE 2.3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GSIB-3G, 4 P | |
GSIB4A80-E3/1 | VISHAY |
获取价格 |
DIODE 2.3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge | |
GSIB4A80-E3/51 | VISHAY |
获取价格 |
DIODE 2.3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge | |
GSIB4A80-E3/72 | VISHAY |
获取价格 |
DIODE 2.3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge |