GSIB620, GSIB640, GSIB660, GSIB680
www.vishay.com
Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers
FEATURES
• UL recognition file number E54214
• Thin single in-line package
• Glass passivated chip junction
• High surge current capability
• High case dielectric strength of 1500 VRMS
• Solder dip 275 °C max. 10 s, per JESD 22-B106
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• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Case Style GSIB-5S
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TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, industrial automation applications.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
Package
GSIB-5S
6.0 A
Case: GSIB-5S
IF(AV)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
VRRM
IFSM
200 V, 400 V, 600 V, 800 V
180 A
10 μA
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
IR
E3 suffix meets JESD 201 class 1A whisker test
VF at IF = 3.0 V
TJ max.
0.95 V
150 °C
In-Line
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
Diode variations
MAXIMUM RATINGS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
GSIB620
GSIB640
400
GSIB660
600
GSIB680
800
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
200
V
V
V
VRMS
140
280
420
560
Maximum DC blocking voltage
VDC
200
400
600
800
TC = 100 °C (1)
TA = 25 °C (2)
6.0
2.8
Maximum average forward rectified
output current at
IF(AV)
A
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC method)
IFSM
180
120
A
Rating for fusing (t < 8.3 ms)
I2t
A2s
°C
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Notes
(1)
Unit case mounted on aluminum plate heatsink
Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
(2)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
GSIB620 GSIB640 GSIB660 GSIB680
UNIT
Maximum instantaneous forward
voltage drop per diode
3.0 A
VF
0.95
V
Maximum DC reverse current at
rated DC blocking voltage per
diode
TA = 25 °C
10
IR
μA
TA = 125 °C
250
Revision: 13-Jun-14
Document Number: 88648
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000