5秒后页面跳转
GSIB4A40-E3/72 PDF预览

GSIB4A40-E3/72

更新时间: 2024-09-19 05:41:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 228K
描述
DIODE 2.3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge Rectifier Diode

GSIB4A40-E3/72 数据手册

 浏览型号GSIB4A40-E3/72的Datasheet PDF文件第2页浏览型号GSIB4A40-E3/72的Datasheet PDF文件第3页浏览型号GSIB4A40-E3/72的Datasheet PDF文件第4页 
GSIB4A20 thru GSIB4A80  
Vishay General Semiconductor  
Glass Passivated Single-In-Line Bridge Rectifier  
Major Ratings and Characteristics  
Case Style GSIB-3G  
IF(AV)  
VRRM  
IFSM  
IR  
4 A  
200 V to 800 V  
80 A  
5 µA  
VF  
1.0 V  
~
~
~
~
Tj max.  
150 °C  
Features  
Mechanical Data  
• UL Recognition file number E54214  
• Ideal for printed circuit boards  
• High surge current capability  
Case: GSIB-3G  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and JESD22-B102D  
• High case dielectric strength of 1500 V  
• Solder Dip 260 °C, 40 seconds  
RMS  
Polarity: As marked on body  
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.  
Recommended Torque: 5.7 cm-kg (5 inches-lbs)  
Typical Applications  
General purpose use in ac-to-dc bridge full wave rec-  
tification for Monitor, TV, Printer, Switching Mode  
Power Supply, Adapter, Audio equipment, and Home  
Appliances applications  
Maximum Ratings  
Ratings at 25 °C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
VRRM  
GSIB4A20  
200  
GSIB4A40  
400  
GSIB4A60  
600  
GSIB4A80  
800  
Unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRMS  
VDC  
140  
200  
280  
400  
420  
600  
560  
800  
V
V
A
Maximum DC blocking voltage  
4.0(1)  
2.3(2)  
Maximum average forward  
rectified output current at  
T
C = 100 °C  
IF(AV)  
TA = 25 °C  
Peak forward surge current single sine-wave  
superimposed on rated load  
IFSM  
80  
A
I2t  
A2sec  
°C  
Rating for fusing (t < 8.3 ms)  
32  
Operating junction and storage temperature  
range  
TJ, TSTG  
- 55 to + 150  
Electrical Characteristics  
Ratings at 25 °C ambient temperature unless otherwise specified.  
Parameter  
Test condition  
at 2.0 A  
Symbol  
VF  
GSIB4A20  
GSIB4A40  
GSIB4A60  
GSIB4A80  
Unit  
V
Maximum instantaneous  
forward drop per leg  
1.00  
Maximum DC reverse  
current at rated DC blocking  
voltage per leg  
T
A = 25 °C  
IR  
5.0  
400  
µA  
TA = 125 °C  
Document Number 88858  
12-Jul-05  
www.vishay.com  
1

与GSIB4A40-E3/72相关器件

型号 品牌 获取价格 描述 数据表
GSIB4A40N VISHAY

获取价格

Bridge Rectifier Diode, 2.3A, 400V V(RRM),
GSIB4A40N-E3 VISHAY

获取价格

DIODE 2.3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge
GSIB4A60 GULFSEMI

获取价格

SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 4.0A
GSIB4A60 VISHAY

获取价格

Glass Passivated Single-In-Line Bridge Rectifier
GSIB4A60/1 VISHAY

获取价格

Bridge Rectifier Diode, 2.3A, 600V V(RRM),
GSIB4A60/1-E3 VISHAY

获取价格

BRIDGE RECTIFIER,1-PHASE FULL-WAVE,600V V(RRM),BR-7W
GSIB4A60/51 VISHAY

获取价格

DIODE 2.3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge
GSIB4A60/72 VISHAY

获取价格

DIODE 2.3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge
GSIB4A60/72-E3 VISHAY

获取价格

DIODE 2.3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge
GSIB4A60E3 VISHAY

获取价格

DIODE 2.3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GSIB-3G, 4 P