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GSIB4A60-E3/51 PDF预览

GSIB4A60-E3/51

更新时间: 2024-09-18 19:18:39
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
4页 228K
描述
DIODE 2.3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge Rectifier Diode

GSIB4A60-E3/51 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-W4
针数:4Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.61
其他特性:UL RECOGNIZED最小击穿电压:600 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSFM-W4JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:80 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:2.3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:600 V
表面贴装:NO端子面层:MATTE TIN
端子形式:WIRE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

GSIB4A60-E3/51 数据手册

 浏览型号GSIB4A60-E3/51的Datasheet PDF文件第2页浏览型号GSIB4A60-E3/51的Datasheet PDF文件第3页浏览型号GSIB4A60-E3/51的Datasheet PDF文件第4页 
GSIB4A20 thru GSIB4A80  
Vishay General Semiconductor  
Glass Passivated Single-In-Line Bridge Rectifier  
Major Ratings and Characteristics  
Case Style GSIB-3G  
IF(AV)  
VRRM  
IFSM  
IR  
4 A  
200 V to 800 V  
80 A  
5 µA  
VF  
1.0 V  
~
~
~
~
Tj max.  
150 °C  
Features  
Mechanical Data  
• UL Recognition file number E54214  
• Ideal for printed circuit boards  
• High surge current capability  
Case: GSIB-3G  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and JESD22-B102D  
• High case dielectric strength of 1500 V  
• Solder Dip 260 °C, 40 seconds  
RMS  
Polarity: As marked on body  
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.  
Recommended Torque: 5.7 cm-kg (5 inches-lbs)  
Typical Applications  
General purpose use in ac-to-dc bridge full wave rec-  
tification for Monitor, TV, Printer, Switching Mode  
Power Supply, Adapter, Audio equipment, and Home  
Appliances applications  
Maximum Ratings  
Ratings at 25 °C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
VRRM  
GSIB4A20  
200  
GSIB4A40  
400  
GSIB4A60  
600  
GSIB4A80  
800  
Unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRMS  
VDC  
140  
200  
280  
400  
420  
600  
560  
800  
V
V
A
Maximum DC blocking voltage  
4.0(1)  
2.3(2)  
Maximum average forward  
rectified output current at  
T
C = 100 °C  
IF(AV)  
TA = 25 °C  
Peak forward surge current single sine-wave  
superimposed on rated load  
IFSM  
80  
A
I2t  
A2sec  
°C  
Rating for fusing (t < 8.3 ms)  
32  
Operating junction and storage temperature  
range  
TJ, TSTG  
- 55 to + 150  
Electrical Characteristics  
Ratings at 25 °C ambient temperature unless otherwise specified.  
Parameter  
Test condition  
at 2.0 A  
Symbol  
VF  
GSIB4A20  
GSIB4A40  
GSIB4A60  
GSIB4A80  
Unit  
V
Maximum instantaneous  
forward drop per leg  
1.00  
Maximum DC reverse  
current at rated DC blocking  
voltage per leg  
T
A = 25 °C  
IR  
5.0  
400  
µA  
TA = 125 °C  
Document Number 88858  
12-Jul-05  
www.vishay.com  
1

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