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GSFN2306 PDF预览

GSFN2306

更新时间: 2024-11-18 21:22:03
品牌 Logo 应用领域
固锝 - GOOD-ARK /
页数 文件大小 规格书
5页 1007K
描述
Power Field-Effect Transistor,

GSFN2306 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.75
Base Number Matches:1

GSFN2306 数据手册

 浏览型号GSFN2306的Datasheet PDF文件第2页浏览型号GSFN2306的Datasheet PDF文件第3页浏览型号GSFN2306的Datasheet PDF文件第4页浏览型号GSFN2306的Datasheet PDF文件第5页 
GSFN2306  
20V N-Channel MOSFET  
Main Product Characteristics  
D
D
V(BR)DSS  
RDS(ON)  
ID  
20V  
D
D
D
5.4mΩ  
65A  
G
G
S
S
S
S
PPAK3X3  
Schematic Diagram  
Features and Benefits  
„
Advanced MOSFET process technology  
„
„
„
Ideal for high efficiency switched mode power supplies  
Low on-resistance with low gate charge  
Fast switching and reverse body recovery  
Description  
The GSFN2306 utilizes the latest techniques to achieve high cell density and low on-resistance.  
These features make this device extremely efficient and reliable for use in high efficiency switch mode  
power supply and a wide variety of other applications.  
Absolute Maximum Ratings (TC=25°C unless otherwise specified)  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
Rating  
20  
Unit  
V
Gate-Source Voltage  
VGS  
±10  
V
Drain Current – Continuous (TC=25°C)  
Drain Current – Continuous (TC=100°C)  
Drain Current – Pulsed1  
65  
A
ID  
41  
A
IDM  
PD  
260  
A
Power Dissipation (TC=25°C)  
44.6  
W
Power Dissipation – Derate above 25°C  
Storage Temperature Range  
0.36  
W/°C  
°C  
°C  
TSTG  
TJ  
-55 to +150  
-55 to +150  
Operating Junction Temperature Range  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Typ.  
---  
Max.  
62  
Unit  
°C/W  
°C/W  
Thermal Resistance Junction to Ambient  
Thermal Resistance Junction to Case  
RθJC  
---  
2.8  
1/5  

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