Datasheet > GSFQ6701

GSFQ6701

更新时间： 2024-11-18 20:03:47

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
6页	1031K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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GSFQ6701 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.75
Base Number Matches：	1

GSFQ6701 数据手册

GSFQ6701

60V N-Channel + P-Channel Complementary MOSFET

Main Product Characteristics

Polarity

V_DSS

N-Ch

60V

P-Ch

-60V

R_DSON(Max.)

30mΩ

5.9A

48mΩ

-4.7A

I_D

SOP-8L

Schematic Diagram

Features and Benefits

Advanced MOSFET process technology

Ideal for high efficiency switched mode power supplies

Low on-resistance with low gate charge

Fast switching and reverse body recovery

Description

The GSFQ6701 utilizes the latest techniques to achieve high cell density and low on-resistance.

These features make this device extremely efficient and reliable for use in high efficiency switch mode

power supply and a wide variety of other applications.

Absolute Maximum Ratings (T_C=25°C unless otherwise specified)

Parameter

Drain-Source Voltage

Symbol

VDS

Rating

Unit

±20

5.9

-60

±20

-4.7

-3.8

-18.8

54.4

Gate-Source Voltage

VGS

Drain Current – Continuous (TA=25°C)

Drain Current – Continuous (TA=70°C)

Drain Current – Pulsed¹

Single Pulse Avalanche Energy²

Single Pulse Avalanche Current²

Power Dissipation (TA=25°C)

4.7

IDM

EAS

IAS

23.6

26.4

2.01

0.02

Power Dissipation – Derate above 25°C

Storage Temperature Range

W/°C

°C

TSTG

-55 to +150

Operating Junction Temperature Range

Thermal Characteristics

Parameter

Symbol

RθJC

Typ.

Max.

Unit

°C/W

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

---

RθJA

1/6

12 3 4 5 6

中文翻译

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