Datasheet > GSFU8008

GSFU8008

更新时间： 2024-11-18 21:22:39

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
6页	1495K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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GSFU8008 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.75	Base Number Matches：	1

GSFU8008 数据手册

GSFU8008

800V N-Channel MOSFET

Main Product Characteristics

V_(BR)DSS

R_DS(ON)

I_D

800V

1.56Ω

TO-220F

Schematic Diagram

Features and Benefits

▪

Advanced MOSFET process technology

Ideal for high efficiency switched mode power supplies

Low on-resistance with low gate charge

Fast switching and reverse body recovery

Description

The GSFU8008 utilizes the latest techniques to achieve high cell density and low on-resistance. These

features make this device extremely efficient and reliable for use in high efficiency switch mode power

supply and a wide variety of other applications.

Absolute Maximum Ratings (T_C=25°C unless otherwise specified)

Parameter

Max.

Unit

Symbol

Drain-Source Voltage

800

V_DS

Gate-to-Source Voltage

± 30

V_GS

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V ¹

Pulsed Drain Current ²

5.1

Single Pulse Avalanche Energy @ L=25mH

Avalanche Current@ L=25mH

Power Dissipation ³

760

E_AS

7.8

I_AS

P_D@T_C= 25°C

Linear Derating Factor

0.48

2.1

W/°C

°C/W

°C

R_θJC

Junction-to-Case³

Junction-to-Ambient (t ≤ 10s) ⁴

Junction-to-Ambient (PCB Mounted, Steady-State)

62.5

R_θJA

Operating Junction and Storage Temperature Range

-55 to + 150

T_JT_STG

1/6

12 3 4 5 6

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