Datasheet > GSFP0360

GSFP0360

更新时间： 2024-11-18 21:19:59

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
6页	487K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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GSFP0360 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.75
Base Number Matches：	1

GSFP0360 数据手册

GSFP0360

30V P-Channel MOSFET

Main Product Characteristics

V_DS

-30V

R_DS(ON)

I_D

8mΩ

-60A

PPAK5x6

Schematic Diagram

Features and Benefits

Advanced MOSFET process technology

§ Ideal for high efficiency switched mode power supplies

§ Low on-resistance with low gate charge

§ Fast switching and reverse body recovery

Description

The GSFP0360 utilizes the latest techniques to achieve high cell density and low on-resistance. These

features make this device extremely efficient and reliable for use in high efficiency switch mode power supply

and a wide variety of other applications.

Absolute Maximum Ratings (T_C=25°C unless otherwise specified)

Parameter

Drain-Source Voltage

Value

-30

Unit

Symbol

V_DS

Gate-Source Voltage

±20

V_GS

I_D

Drain Current-Continuous

Pulsed Drain Current

-60

-160

I_DM

Maximum Power Dissipation

Derating Factor

P_D

0.56

W/°C

°C/W

°C

Single Pulse Avalanche Energy⁵

Thermal Resistance, Junction-to-Case²

Storage Temperature Range

Operating Junction Temperature Range

400

E_AS

R_θJC

T_STG

T_J

1.79

-55 To +150

°C

1/6

12 3 4 5 6

中文翻译

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