Datasheet > GSFN4904

GSFN4904

更新时间： 2024-11-21 20:58:39

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
5页	963K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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GSFN4904 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.75
Base Number Matches：	1

GSFN4904 数据手册

GSFN4904

40V N-Channel MOSFET

Main Product Characteristics

V_(BR)DSS

R_DS(ON)

I_D

40V

5.5mΩ

70A

Schematic Diagram

PPAK3X3

Features and Benefits

Advanced MOSFET process technology

Ideal for high efficiency switched mode power supplies

Low on-resistance with low gate charge

Fast switching and reverse body recovery

Description

The GSFN4904 utilizes the latest techniques to achieve high cell density and low on-resistance.

These features make this device extremely efficient and reliable for use in high efficiency switch mode

power supply and a wide variety of other applications.

Absolute Maximum Ratings (T_C=25°C unless otherwise specified)

Parameter

Drain-Source Voltage

Symbol

VDS

Rating

Unit

Gate-Source Voltage

VGS

±20

Drain Current – Continuous (TC=25°C)

Drain Current – Continuous (TC=100°C)

Drain Current – Pulsed¹

44.3

IDM

280

Power Dissipation (TC=25°C)

Power Dissipation – Derate above 25°C

Storage Temperature Range

0.42

W/°C

°C

TSTG

-55 to +150

Operating Junction Temperature Range

Thermal Characteristics

Parameter

Symbol

RθJA

Typ.

Max.

Unit

°C/W

Thermal Resistance Junction to Ambient

Thermal Resistance Junction to Case

---

RθJC

2.4

1/5

12 3 4 5

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