Datasheet > GSFH0896

GSFH0896

更新时间： 2024-11-18 21:18:15

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
6页	1127K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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GSFH0896 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.75	Base Number Matches：	1

GSFH0896 数据手册

GSFH0896

82V N-Channel MOSFET

Main Product Characteristics

V_(BR)D

82V

R_DS(ON)

I_D

8mΩ

95A

Schematic Diagram

TO-220

Features and Benefits

Advanced MOSFET process technology

§ Ideal for high efficiency switched mode power supplies

Low on-resistance with low gate charge

§ Fast switching and reverse body recovery

Description

The GSFH0896 utilizes the latest techniques to achieve high cell density and low on-resistance. These

features make this device extremely efficient and reliable for use in high efficiency switch mode power

supply and a wide variety of other applications.

Absolute Maximum Ratings (T_A=25°C unless otherwise specified)

Parameter

Drain-Source Voltage

Max.

Unit

Symbol

V_DS

Gate-Source Voltage

±20

V_GS

Continuous Drain Current, @Steady-State

(T_A=25°C)

Continuous Drain Current, @Steady-State

(T_A=100°C)

I_D

Pulsed Drain Current¹

320

I_DM

Power Dissipation (T_A=25°C)

Derating Factor(TA=25°C)

Single Pulse Avalanche Energy⁴

170

P_D

1.13

W/°C

°C/W

°C

529

E_AS

R_θJC

T_J

Junction-to-Case Thermal Resistance

@Steady-State

0.88

Operating Junction Temperature Range

Storage Temperature Range

-55 To +175

T_STG

1/6

12 3 4 5 6

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