Datasheet > 存储 > SRAM> GS88237AB-150

GS88237AB-150

更新时间： 2024-11-11 04:56:35

品牌	Logo	应用领域
GSI		存储内存集成电路静态存储器时钟
页数	文件大小	规格书
28页	722K
描述
256K x 36 9Mb Synchronous Burst SRAMs

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技术参数
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GS88237AB-150 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	BGA, BGA119,7X17,50	针数：	119
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.B
HTS代码：	8542.32.00.41	风险等级：	5.74
Is Samacsys：	N	最长访问时间：	3.3 ns
其他特性：	PIPELINED ARCHITECTURE; IT CAN ALSO OPERATE WITH 3.3V SUPPLY	最大时钟频率 (fCLK)：	150 MHz
I/O 类型：	COMMON	JESD-30 代码：	R-PBGA-B119
JESD-609代码：	e0	长度：	22 mm
内存密度：	9437184 bit	内存集成电路类型：	CACHE SRAM
内存宽度：	36	湿度敏感等级：	3
功能数量：	1	端子数量：	119
字数：	262144 words	字数代码：	256000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	256KX36
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	BGA	封装等效代码：	BGA119,7X17,50
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	2.5/3.3 V	认证状态：	Not Qualified
座面最大高度：	1.99 mm	最大待机电流：	0.02 A
最小待机电流：	2.3 V	子类别：	SRAMs
最大压摆率：	0.19 mA	最大供电电压 (Vsup)：	2.7 V
最小供电电压 (Vsup)：	2.3 V	标称供电电压 (Vsup)：	2.5 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子面层：	TIN LEAD
端子形式：	BALL	端子节距：	1.27 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	14 mm	Base Number Matches：	1

GS88237AB-150 数据手册

GS88237AB-250/225/200/166/150/133

250 MHz–133 MHz

119-Bump BGA

Commercial Temp

Industrial Temp

256K x 36

9Mb Synchronous Burst SRAMs

2.5 V or 3.3 V V

2.5 V or 3.3 V I/O

SCD and DCD Pipelined Reads

Features

The GS88237AB is a SCD (Single Cycle Deselect) and DCD

(Dual Cycle Deselect) pipelined synchronous SRAM. DCD

SRAMs pipeline disable commands to the same degree as read

commands. SCD SRAMs pipeline deselect commands one stage

less than read commands. SCD RAMs begin turning off their

outputs immediately after the deselect command has been

captured in the input registers. DCD RAMs hold the deselect

command for one full cycle and then begin turning off their

outputs just after the second rising edge of clock. The user may

configure this SRAM for either mode of operation using the SCD

mode input.

• Single/Dual Cycle Deselect selectable

• IEEE 1149.1 JTAG-compatible Boundary Scan

• ZQ mode pin for user-selectable high/low output drive

• 2.5 V or 3.3 V +10%/–10% core power supply

• 2.5 V or 3.3 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Byte Write (BW) and/or Global Write (GW) operation

• Internal self-timed write cycle

• Automatic power-down for portable applications

• JEDEC-standard 119-bump BGA package

Byte Write and Global Write

Byte write operation is performed by using Byte Write enable

Functional Description

(BW) input combined with one or more individual byte write

signals (Bx). In addition, Global Write (GW) is available for

writing all bytes at one time, regardless of the Byte Write control

inputs.

Applications

The GS88237AB is a 9,437,184-bit high performance

synchronous SRAM with a 2-bit burst address counter. Although

of a type originally developed for Level 2 Cache applications

supporting high performance CPUs, the device now finds

application in synchronous SRAM applications, ranging from

DSP main store to networking chip set support.

FLXDrive™

The ZQ pin allows selection between high drive strength (ZQ low)

for multi-drop bus applications and normal drive strength (ZQ

floating or high) point-to-point applications. See the Output Driver

Characteristics chart for details.

Controls

Addresses, data I/Os, chip enable (E1), address burst control

Sleep Mode

inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW,

GW) are synchronous and are controlled by a positive-edge-

triggered clock input (CK). Output enable (G) and power down

control (ZZ) are asynchronous inputs. Burst cycles can be initiated

with either ADSP or ADSC inputs. In Burst mode, subsequent

burst addresses are generated internally and are controlled by

ADV. The burst address counter may be configured to count in

either linear or interleave order with the Linear Burst Order (LBO)

input. The Burst function need not be used. New addresses can be

loaded on every cycle with no degradation of chip performance.

Low power (Sleep mode) is attained through the assertion (High)

of the ZZ signal, or by stopping the clock (CK). Memory data is

retained during Sleep mode.

Core and Interface Voltages

The GS88237AB operates on a 2.5 V or 3.3 V power supply. All

input are 3.3 V and 2.5 V compatible. Separate output power

(V_DDQ) pins are used to decouple output noise from the internal

circuits and are 3.3 V and 2.5 V compatible.

Parameter Synopsis

-250 -225 -200 -166 -150 -133 Unit

Pipeline

3-1-1-1

2.0 2.2 2.5 2.9 3.3 3.5 ns

4.0 4.4 5.0 6.0 6.7 7.5 ns

tCycle

3.3 V

2.5 V

Current 330 300 270 230 215 190 mA

Current 320 295 265 225 210 185 mA

Rev: 1.02 11/2004

1/28

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...28

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与GS88237AB-150相关器件

型号	品牌	获取价格	描述	数据表
GS88237AB-150I	GSI	获取价格	256K x 36 9Mb Synchronous Burst SRAMs
GS88237AB-150T	GSI	获取价格	暂无描述
GS88237AB-166	GSI	获取价格	256K x 36 9Mb Synchronous Burst SRAMs
GS88237AB-166I	GSI	获取价格	256K x 36 9Mb Synchronous Burst SRAMs
GS88237AB-166IT	GSI	获取价格	暂无描述
GS88237AB-166T	GSI	获取价格	Cache SRAM, 256KX36, 2.9ns, CMOS, PBGA119, PLASTIC, BGA-119
GS88237AB-200	GSI	获取价格	256K x 36 9Mb Synchronous Burst SRAMs
GS88237AB-200I	GSI	获取价格	256K x 36 9Mb Synchronous Burst SRAMs
GS88237AB-200T	GSI	获取价格	Cache SRAM, 256KX36, 2.5ns, CMOS, PBGA119, PLASTIC, BGA-119
GS88237AB-225	GSI	获取价格	256K x 36 9Mb Synchronous Burst SRAMs

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