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GS88237AB-250 PDF预览

GS88237AB-250

更新时间: 2024-02-12 10:57:21
品牌 Logo 应用领域
GSI 存储静态存储器
页数 文件大小 规格书
28页 722K
描述
256K x 36 9Mb Synchronous Burst SRAMs

GS88237AB-250 数据手册

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GS88237AB-250/225/200/166/150/133  
250 MHz133 MHz  
119-Bump BGA  
Commercial Temp  
Industrial Temp  
256K x 36  
9Mb Synchronous Burst SRAMs  
2.5 V or 3.3 V V  
DD  
2.5 V or 3.3 V I/O  
SCD and DCD Pipelined Reads  
Features  
The GS88237AB is a SCD (Single Cycle Deselect) and DCD  
(Dual Cycle Deselect) pipelined synchronous SRAM. DCD  
SRAMs pipeline disable commands to the same degree as read  
commands. SCD SRAMs pipeline deselect commands one stage  
less than read commands. SCD RAMs begin turning off their  
outputs immediately after the deselect command has been  
captured in the input registers. DCD RAMs hold the deselect  
command for one full cycle and then begin turning off their  
outputs just after the second rising edge of clock. The user may  
configure this SRAM for either mode of operation using the SCD  
mode input.  
• Single/Dual Cycle Deselect selectable  
• IEEE 1149.1 JTAG-compatible Boundary Scan  
• ZQ mode pin for user-selectable high/low output drive  
• 2.5 V or 3.3 V +10%/–10% core power supply  
• 2.5 V or 3.3 V I/O supply  
• LBO pin for Linear or Interleaved Burst mode  
• Internal input resistors on mode pins allow floating mode pins  
• Byte Write (BW) and/or Global Write (GW) operation  
• Internal self-timed write cycle  
• Automatic power-down for portable applications  
• JEDEC-standard 119-bump BGA package  
Byte Write and Global Write  
Byte write operation is performed by using Byte Write enable  
Functional Description  
(BW) input combined with one or more individual byte write  
signals (Bx). In addition, Global Write (GW) is available for  
writing all bytes at one time, regardless of the Byte Write control  
inputs.  
Applications  
The GS88237AB is a 9,437,184-bit high performance  
synchronous SRAM with a 2-bit burst address counter. Although  
of a type originally developed for Level 2 Cache applications  
supporting high performance CPUs, the device now finds  
application in synchronous SRAM applications, ranging from  
DSP main store to networking chip set support.  
FLXDrive™  
The ZQ pin allows selection between high drive strength (ZQ low)  
for multi-drop bus applications and normal drive strength (ZQ  
floating or high) point-to-point applications. See the Output Driver  
Characteristics chart for details.  
Controls  
Addresses, data I/Os, chip enable (E1), address burst control  
Sleep Mode  
inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW,  
GW) are synchronous and are controlled by a positive-edge-  
triggered clock input (CK). Output enable (G) and power down  
control (ZZ) are asynchronous inputs. Burst cycles can be initiated  
with either ADSP or ADSC inputs. In Burst mode, subsequent  
burst addresses are generated internally and are controlled by  
ADV. The burst address counter may be configured to count in  
either linear or interleave order with the Linear Burst Order (LBO)  
input. The Burst function need not be used. New addresses can be  
loaded on every cycle with no degradation of chip performance.  
Low power (Sleep mode) is attained through the assertion (High)  
of the ZZ signal, or by stopping the clock (CK). Memory data is  
retained during Sleep mode.  
Core and Interface Voltages  
The GS88237AB operates on a 2.5 V or 3.3 V power supply. All  
input are 3.3 V and 2.5 V compatible. Separate output power  
(VDDQ) pins are used to decouple output noise from the internal  
circuits and are 3.3 V and 2.5 V compatible.  
Parameter Synopsis  
-250 -225 -200 -166 -150 -133 Unit  
Pipeline  
3-1-1-1  
t
2.0 2.2 2.5 2.9 3.3 3.5 ns  
4.0 4.4 5.0 6.0 6.7 7.5 ns  
KQ  
tCycle  
3.3 V  
2.5 V  
Current 330 300 270 230 215 190 mA  
Current 320 295 265 225 210 185 mA  
Rev: 1.02 11/2004  
1/28  
© 2002, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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