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GS880Z36BGT-200IT PDF预览

GS880Z36BGT-200IT

更新时间： 2024-09-16 09:12:15
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 静态存储器内存集成电路
页数 文件大小 规格书
24页 1686K
描述
ZBT SRAM, 256KX36, 6.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100

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GS880Z36BGT-200IT 技术参数

生命周期：Contact Manufacturer包装说明：LQFP,
Reach Compliance Code：unknownECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.62
最长访问时间：6.5 ns其他特性：FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
JESD-30 代码：R-PQFP-G100长度：20 mm
内存密度：9437184 bit内存集成电路类型：ZBT SRAM
内存宽度：36功能数量：1
端子数量：100字数：262144 words
字数代码：256000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：256KX36封装主体材料：PLASTIC/EPOXY
封装代码：LQFP封装形状：RECTANGULAR
封装形式：FLATPACK, LOW PROFILE并行/串行：PARALLEL
座面最大高度：1.6 mm最大供电电压 (Vsup)：2.7 V
最小供电电压 (Vsup)：2.3 V标称供电电压 (Vsup)：2.5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：0.65 mm端子位置：QUAD
宽度：14 mmBase Number Matches：1

GS880Z36BGT-200IT 数据手册

 浏览型号GS880Z36BGT-200IT的Datasheet PDF文件第2页浏览型号GS880Z36BGT-200IT的Datasheet PDF文件第3页浏览型号GS880Z36BGT-200IT的Datasheet PDF文件第4页浏览型号GS880Z36BGT-200IT的Datasheet PDF文件第5页浏览型号GS880Z36BGT-200IT的Datasheet PDF文件第6页浏览型号GS880Z36BGT-200IT的Datasheet PDF文件第7页 
GS880Z18/32/36BT-333/300/250/200/150  
333 MHz–150 MHz  
100-Pin TQFP  
Commercial Temp  
Industrial Temp  
9Mb Pipelined and Flow Through  
Synchronous NBT SRAM  
2.5 V or 3.3 V V  
DD  
2.5 V or 3.3 V I/O  
Sleep mode enable (ZZ) and Output Enable. Output Enable can  
be used to override the synchronous control of the output  
drivers and turn the RAM's output drivers off at any time.  
Write cycles are internally self-timed and initiated by the rising  
edge of the clock input. This feature eliminates complex off-  
chip write pulse generation equired by asynchronous SRAMs  
and simplifies input signal timing.  
Features  
• NBT (No Bus Turn Around) functionality allows zero wait  
read-write-read bus utilization; Fully pin-compatible with  
both pipelined and flow through NtRAM™, NoBL™ and  
ZBT™ SRAMs  
• 2.5 V or 3.3 V +10%/–10% core power supply  
• 2.5 V or 3.3 V I/O supply  
• User-configurable Pipeline and Flow Through mode  
• LBO pin for Linear or Interleave Burst mode  
• Pin compatible with 2M, 4M, and 18M devices  
• Byte write operation (9-bit Bytes)  
• 3 chip enable signals for easy depth expansion  
• ZZ Pin for automatic power-down  
The GS880Z18/32/36BT may be configured by the user to  
operate in Pipeline or Flow Through mode. Operating as a  
pipelined synchronous device, meaning that in addition to the  
rising edge triggered registers that capture input signals, the  
device incorporates a rising-edge-triggered output register. For  
read cycles, pipelined SRAM output data is temporarily stored  
by the edge triggered output register during the access cycle  
and then leased to the output drivers at the next rising edge of  
clock.  
• JEDEC-standard 100-lead TQFP package  
• RoHS-compliant 100-lead TQFP package available  
Functional Description  
The GS880Z18/32/36BT is implemented with GSI's high  
performance CMOS technology and is available in a JEDEC-  
standard 100-pin TQFP package.  
The GS880Z18/32/36BT is a 9Mbit Synchronous Static  
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or  
other pipelined read/double late write or flow through read/  
single late write SRAMs, allow utilization of all available bus  
bandwidth by eliminating the need to insert deselect cycles  
when the device is switched from read to write cycles.  
Because it is a synchronous device, address, data inputs, and  
read/ write control inputs are captured on the rising edge of the  
input clock. Burst order control (LBO) must be tied to a power  
rail for proper operation. Asynchronous inputs include the  
Paramter Synopsis  
-333  
-300  
-250  
-200  
-150  
Unit  
tKQ  
2.5  
3.0  
2.5  
3.3  
2.5  
4.0  
3.0  
5.0  
3.8  
6.7  
ns  
ns  
tCycle  
Pipeline  
3-1-1-1  
Curr (x18)  
Curr (x32/x36)  
250  
290  
230  
265  
200  
230  
170  
195  
140  
160  
mA  
mA  
tKQ  
4.5  
4.5  
5.0  
5.0  
5.5  
5.5  
6.5  
6.5  
7.5  
7.5  
ns  
ns  
tCycle  
Flow Through  
1-1-1  
Curr (x18)  
Curr (x32/x36)  
200  
230  
185  
210  
160  
185  
140  
160  
128  
145  
mA  
mA  
Rev: 1.04c 1/2012  
1/24  
© 2001, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
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