Datasheet > GS880Z36BGT-333T

GS880Z36BGT-333T

更新时间： 2024-11-26 03:19:47

品牌	Logo	应用领域
罗彻斯特 - ROCHESTER		静态存储器内存集成电路
页数	文件大小	规格书
24页	1686K
描述
ZBT SRAM, 256KX36, 4.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GS880Z36BGT-333T 数据手册

GS880Z18/32/36BT-333/300/250/200/150

333 MHz–150 MHz

100-Pin TQFP

Commercial Temp

Industrial Temp

9Mb Pipelined and Flow Through

Synchronous NBT SRAM

2.5 V or 3.3 V V

2.5 V or 3.3 V I/O

Sleep mode enable (ZZ) and Output Enable. Output Enable can

be used to override the synchronous control of the output

drivers and turn the RAM's output drivers off at any time.

Write cycles are internally self-timed and initiated by the rising

edge of the clock input. This feature eliminates complex off-

chip write pulse generation required by asynchronous SRAMs

and simplifies input signal timing.

Features

• NBT (No Bus Turn Around) functionality allows zero wait

read-write-read bus utilization; Fully pin-compatible with

both pipelined and flow through NtRAM™, NoBL™ and

ZBT™ SRAMs

• 2.5 V or 3.3 V +10%/–10% core power supply

• 2.5 V or 3.3 V I/O supply

• User-configurable Pipeline and Flow Through mode

• LBO pin for Linear or Interleave Burst mode

• Pin compatible with 2M, 4M, and 18M devices

• Byte write operation (9-bit Bytes)

• 3 chip enable signals for easy depth expansion

• ZZ Pin for automatic power-down

The GS880Z18/32/36BT may be configured by the user to

operate in Pipeline or Flow Through mode. Operating as a

pipelined synchronous device, meaning that in addition to the

rising edge triggered registers that capture input signals, the

device incorporates a rising-edge-triggered output register. For

read cycles, pipelined SRAM output data is temporarily stored

by the edge triggered output register during the access cycle

and then released to the output drivers at the next rising edge of

clock.

• JEDEC-standard 100-lead TQFP package

• RoHS-compliant 100-lead TQFP package available

Functional Description

The GS880Z18/32/36BT is implemented with GSI's high

performance CMOS technology and is available in a JEDEC-

standard 100-pin TQFP package.

The GS880Z18/32/36BT is a 9Mbit Synchronous Static

SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or

other pipelined read/double late write or flow through read/

single late write SRAMs, allow utilization of all available bus

bandwidth by eliminating the need to insert deselect cycles

when the device is switched from read to write cycles.

Because it is a synchronous device, address, data inputs, and

read/ write control inputs are captured on the rising edge of the

input clock. Burst order control (LBO) must be tied to a power

rail for proper operation. Asynchronous inputs include the

Paramter Synopsis

-333

-300

-250

-200

-150

Unit

t_KQ

2.5

3.0

2.5

3.3

2.5

4.0

3.0

5.0

3.8

6.7

tCycle

Pipeline

3-1-1-1

Curr (x18)

Curr (x32/x36)

250

290

230

265

200

230

170

195

140

160

t_KQ

4.5

5.0

5.5

6.5

7.5

tCycle

Flow Through

2-1-1-1

Curr (x18)

Curr (x32/x36)

200

230

185

210

160

185

140

160

128

145

Rev: 1.04c 1/2012

1/24

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...24

中文翻译

下载PDF

与GS880Z36BGT-333T相关器件

型号	品牌	获取价格	描述	数据表
GS880Z36BT-133	GSI	获取价格	ZBT SRAM, 256KX36, 8.5ns, CMOS, PQFP100, TQFP-100
GS880Z36BT-133I	GSI	获取价格	ZBT SRAM, 256KX36, 8.5ns, CMOS, PQFP100, TQFP-100
GS880Z36BT-133IT	GSI	获取价格	ZBT SRAM, 256KX36, 8.5ns, CMOS, PQFP100, TQFP-100
GS880Z36BT-150	GSI	获取价格	9Mb Pipelined and Flow Through Synchronous NBT SRAM
GS880Z36BT-150	ROCHESTER	获取价格	ZBT SRAM, 256KX36, 7.5ns, CMOS, PQFP100, TQFP-100
GS880Z36BT-150I	GSI	获取价格	9Mb Pipelined and Flow Through Synchronous NBT SRAM
GS880Z36BT-150I	ROCHESTER	获取价格	ZBT SRAM, 256KX36, 7.5ns, CMOS, PQFP100, TQFP-100
GS880Z36BT-150IT	ROCHESTER	获取价格	ZBT SRAM, 256KX36, 7.5ns, CMOS, PQFP100, TQFP-100
GS880Z36BT-150IV	GSI	获取价格	9Mb Pipelined and Flow Through Synchronous NBT SRAM
GS880Z36BT-150IVT	GSI	获取价格	ZBT SRAM, 256KX36, 7.5ns, CMOS, PQFP100, TQFP-100

与GS880Z36BGT-333T相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

41
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

33
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

61
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

57

产品中心

服务支持

精选活动

关于我们

帮助中心

GS880Z36BGT-333T

GS880Z36BGT-333T 数据手册

与GS880Z36BGT-333T相关器件

与GS880Z36BGT-333T相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

GS880Z36BGT-333T

GS880Z36BGT-333T 数据手册

与GS880Z36BGT-333T相关器件

与GS880Z36BGT-333T相关文章

您还可以找

您在本页遇到什么问题？