Datasheet > 存储 > SRAM> GS832018GT-200IV

GS832018GT-200IV

更新时间： 2024-11-05 04:19:55

品牌	Logo	应用领域
GSI		存储内存集成电路静态存储器
页数	文件大小	规格书
24页	1131K
描述
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs

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技术参数
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GS832018GT-200IV 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	QFP
包装说明：	LQFP,	针数：	100
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.B
HTS代码：	8542.32.00.41	风险等级：	5.46
Is Samacsys：	N	最长访问时间：	7.5 ns
其他特性：	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	JESD-30 代码：	R-PQFP-G100
JESD-609代码：	e3	长度：	20 mm
内存密度：	37748736 bit	内存集成电路类型：	CACHE SRAM
内存宽度：	18	湿度敏感等级：	3
功能数量：	1	端子数量：	100
字数：	2097152 words	字数代码：	2000000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	2MX18
封装主体材料：	PLASTIC/EPOXY	封装代码：	LQFP
封装形状：	RECTANGULAR	封装形式：	FLATPACK, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified	座面最大高度：	1.6 mm
最大供电电压 (Vsup)：	2 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Matte Tin (Sn)	端子形式：	GULL WING
端子节距：	0.65 mm	端子位置：	QUAD
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	14 mm
Base Number Matches：	1

GS832018GT-200IV 数据手册

Preliminary

GS832018/32/36T-xxxV

250 MHz–133 MHz

100-Pin TQFP

Commercial Temp

Industrial Temp

2M x 18, 1M x 32, 1M x 36

36Mb Sync Burst SRAMs

1.8 V or 2.5 V V

1.8 V or 2.5 V I/O

cycles can be initiated with either ADSP or ADSC inputs. In

Burst mode, subsequent burst addresses are generated

internally and are controlled by ADV. The burst address

counter may be configured to count in either linear or

interleave order with the Linear Burst Order (LBO) input. The

Burst function need not be used. New addresses can be loaded

on every cycle with no degradation of chip performance.

Features

• FT pin for user-configurable flow through or pipeline

operation

• Single Cycle Deselect (SCD) operation

• 1.8 V or 2.5 V core power supply

• 1.8 V or 2.5 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Default to Interleaved Pipeline mode

• Byte Write (BW) and/or Global Write (GW) operation

• Internal self-timed write cycle

• Automatic power-down for portable applications

• JEDEC-standard 100-lead TQFP package

• RoHS-compliant 100-lead TQFP package available

Flow Through/Pipeline Reads

The function of the Data Output register can be controlled by

the user via the FT mode pin (Pin 14). Holding the FT mode

pin low places the RAM in Flow Through mode, causing

output data to bypass the Data Output Register. Holding FT

high places the RAM in Pipeline mode, activating the rising-

edge-triggered Data Output Register.

Byte Write and Global Write

Functional Description

Byte write operation is performed by using Byte Write enable

(BW) input combined with one or more individual byte write

signals (Bx). In addition, Global Write (GW) is available for

writing all bytes at one time, regardless of the Byte Write

control inputs.

Applications

The GS832018/32/36T-xxxV is a 37,748,736-bit high

performance synchronous SRAM with a 2-bit burst address

counter. Although of a type originally developed for Level 2

Cache applications supporting high performance CPUs, the

device now finds application in synchronous SRAM

applications, ranging from DSP main store to networking chip

set support.

Sleep Mode

Low power (Sleep mode) is attained through the assertion

(High) of the ZZ signal, or by stopping the clock (CK).

Memory data is retained during Sleep mode.

Controls

Core and Interface Voltages

The GS832018/32/36T-xxxV operates on a 1.8 V power

supply. All input are 1.8 V compatible. Separate output power

Addresses, data I/Os, chip enables (E1, E2, E3), address burst

control inputs (ADSP, ADSC, ADV), and write control inputs

(Bx, BW, GW) are synchronous and are controlled by a

positive-edge-triggered clock input (CK). Output enable (G)

and power down control (ZZ) are asynchronous inputs. Burst

) pins are used to decouple output noise from the

DDQ

internal circuits and are 1.8 V compatible.

Parameter Synopsis

-250 -225 -200 -166 -150 -133 Unit

3.0 3.0 3.0 3.5 3.8 4.0 ns

4.0 4.4 5.0 6.0 6.6 7.5 ns

Pipeline

3-1-1-1

tCycle

Curr (x18) 285 265 245 220 210 185 mA

Curr (x32/x36) 350 320 295 260 240 215 mA

6.5 7.0 7.5 8.0 8.5 8.5 ns

Flow

Through

2-1-1-1

tCycle

Curr (x18) 205 195 185 175 165 155 mA

Curr (x32/x36) 235 225 210 200 190 175 mA

Rev: 1.03 6/2006

1/24

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...24

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与GS832018GT-200IV相关器件

型号	品牌	获取价格	描述	数据表
GS832018GT-200IVT	GSI	获取价格	Cache SRAM, 2MX18, 7.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
GS832018GT-200V	GSI	获取价格	2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018GT-200VT	GSI	获取价格	Cache SRAM, 2MX18, 7.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
GS832018GT-225	GSI	获取价格	2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018GT-225I	GSI	获取价格	2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018GT-225IV	GSI	获取价格	2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018GT-225T	GSI	获取价格	Cache SRAM, 2MX18, 7ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
GS832018GT-225V	GSI	获取价格	2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018GT-250	GSI	获取价格	2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018GT-250I	GSI	获取价格	2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs

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