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GS78108AB-8IT PDF预览

GS78108AB-8IT

更新时间: 2024-09-17 10:32:23
品牌 Logo 应用领域
GSI 静态存储器
页数 文件大小 规格书
12页 351K
描述
Standard SRAM, 1MX8, 8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119

GS78108AB-8IT 数据手册

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GS78108AB  
BGA  
Commercial Temp  
Industrial Temp  
1M x 8  
8, 10, 12 ns  
3.3 V V  
DD  
8Mb Asynchronous SRAM  
Features  
• Fast access time: 8, 10, 12 ns  
• CMOS low power operation: 240/190/170 mA at minimum  
cycle time  
• Single 3.3 V ± 0.3 V power supply  
• All inputs and outputs are TTL-compatible  
• Fully static operation  
• Industrial Temperature Option: –40° to 85°C  
• 14 mm x 22 mm, 119-bump, 1.27 mm Pitch Ball Grid Array  
package  
Pin Descriptions  
Description  
Symbol  
A0 to A19  
DQ1 to DQ8  
CE  
Address input  
Data input/output  
Chip enable input  
Write enable input  
Output enable input  
+3.3 V power supply  
WE  
OE  
• RoHS-compliant package available  
V
DD  
V
Ground  
SS  
Description  
NC  
No connect  
The GS78108A is a high speed CMOS Static RAM organized  
as 1,048,576-words by 8-bits. Static design eliminates the need  
for external clocks or timing strobes. The GS78108operates on  
a single 3.3 V power supply, and all inputs and outputs are  
TTL-compatible. The GS7810A8 is available in a  
14 mm x 22 mm BGA package.  
Block Diagram  
A0  
Row  
Decoder  
Memory Array  
Address  
Input  
Buffer  
Column  
Decoder  
A19  
CE  
WE  
OE  
I/O Buffer  
Control  
DQ8  
DQ1  
Rev: 1.04a 2/2007  
1/12  
© 2003, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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