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GS1DE-TPS05 PDF预览

GS1DE-TPS05

更新时间: 2024-11-02 14:50:35
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
4页 303K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

GS1DE-TPS05 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:DO-214AC包装说明:ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.12Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:200 V
表面贴装:YES端子面层:Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

GS1DE-TPS05 数据手册

 浏览型号GS1DE-TPS05的Datasheet PDF文件第2页浏览型号GS1DE-TPS05的Datasheet PDF文件第3页浏览型号GS1DE-TPS05的Datasheet PDF文件第4页 
GS1AE-TPS05  
THRU  
GS1ME-TPS05  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
1.0 Amp  
·
Epoxy meets UL 94 V-0 flammability rating  
·
Moisture Sensitivity Level 1  
For Surface Mount Applications  
Extremely Low Thermal Resistance  
Silicon Rectifier  
50 to 1000 Volts  
High Temp Soldering: 260°C for 10 Seconds At Terminals  
Vacuum Soldering Process Provides Better Surge Capability  
DO-214AC  
Maximum Ratings  
(SMAE)  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 15°C/W Junction To Lead  
H
Cathode Band  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Reccurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
J
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
GS1AE-TPS05 GS1A  
GS1BE-TPS05 GS1B  
GS1DE-TPS05 GS1D  
GS1GE-TPS05 GS1G  
GS1JE-TPS05 GS1J  
GS1KE-TPS05 GS1K  
GS1ME-TPS05 GS1M  
35V  
70V  
100V  
200V  
100V  
200V  
A
C
140V  
280V  
420V  
560V  
700V  
400V  
600V  
400V  
600V  
E
D
F
B
800V  
1000V  
800V  
1000V  
G
DIMENSIONS  
INCHES  
MIN  
.079  
.050  
.002  
---  
MM  
MIN  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
DIM  
A
MAX  
.096  
.075  
.008  
.02  
MAX  
2.44  
1.90  
.20  
NOTE  
2.01  
1.27  
.05  
Average Forward  
current  
IF(AV)  
1.0A  
TL = 110°C  
B
C
D
E
---  
.51  
.030  
.065  
.189  
.157  
.090  
.060  
.084  
.208  
.180  
.115  
.76  
1.52  
2.13  
5.30  
4.57  
2.92  
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine,  
F
1.65  
4.80  
4.00  
2.29  
G
H
J
Maximum  
IFM = 1.0A;  
TJ = 25°C*  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
1.1V  
SUGGESTED SOLDER  
PAD LAYOUT  
0.085”  
IR  
10µA  
50µA  
TJ = 25°C  
TJ = 125°C  
Typical Junction  
Capacitance  
CJ  
15pF  
Measured at  
1.0MHz, VR=4.0V  
0.095”  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.  
0.075”  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
www.mccsemi.com  
Revision: B  
2011/10/13  
1 of 4  

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