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GS1D-T3-LF PDF预览

GS1D-T3-LF

更新时间: 2024-11-02 13:01:23
品牌 Logo 应用领域
WTE 整流二极管光电二极管瞄准线
页数 文件大小 规格书
3页 50K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

GS1D-T3-LF 数据手册

 浏览型号GS1D-T3-LF的Datasheet PDF文件第2页浏览型号GS1D-T3-LF的Datasheet PDF文件第3页 
WTE  
PO WER SEMICONDUCTORS  
GS1A – GS1M  
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER  
Features  
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Glass Passivated Die Construction  
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!
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Ideally Suited for Automatic Assembly  
Low Forward Voltage Drop  
Surge Overload Rating to 30A Peak  
Low Power Loss  
Built-in Strain Relief  
Plastic Case Material has UL Flammability  
Classification Rating 94V-O  
B
D
A
F
C
H
G
E
SMA/DO-214AC  
Min  
Mechanical Data  
Dim  
A
Max  
2.90  
4.60  
1.60  
0.305  
5.28  
2.44  
0.203  
1.52  
!
!
Case: Molded Plastic  
2.50  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
B
4.00  
C
1.40  
!
!
!
D
0.152  
4.80  
E
Weight: 0.064 grams (approx.)  
F
2.00  
G
H
0.051  
0.76  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
GS1A GS1B GS1D GS1G  
GS1J  
GS1K GS1M Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
1.0  
V
A
Average Rectified Output Current @TL = 100°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
1.10  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 125°C  
5.0  
200  
µA  
Reverse Recovery Time (Note 1)  
trr  
Cj  
2.5  
15  
µS  
pF  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Operating and Storage Temperature Range  
RJL  
Tj, TSTG  
30  
K/W  
°C  
-65 to +175  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
3. Mounted on P.C. Board with 8.0mm2 land area.  
GS1A – GS1M  
1 of 3  
© 2002 Won-Top Electronics  

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