Datasheet > GS1DF

GS1DF

更新时间： 2024-11-02 12:56:59

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	510K
描述
1A patch rectifier diode 200V SMAF series

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中文翻译

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数据手册

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GS1DF 数据手册

GS1AF - GS1MF

SURFACE MOUNT RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 1.0 A

Features

Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop

Low Power Loss

Built-in Strain Relief

Plastic Case Material has UL Flammability

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Classification Rating 94V-O

Mechanical Data

SMAF

Dim Min Max Typ

Case: SMAF,Molded Plastic

4.75 4.85

3.68 3.72

4.80

3.70

2.60

1.00

Terminals: Solder Plated, Solderable

2.57

2.63

per MIL-STD-750, Method 2026

Polarity:Color band denotes cathode end

Mounting Position:Any

0.097 1.03

1.38 1.42 1.40

0.13 0.17 0.15

0.63 0.67 0.65

Weight:0.0018 ounce, 0.064 grams

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Characteristic

Symbol GS1AF GS1BF GS1DF GS1GF GS1JF GS1KF GS1MF Unit

RRM

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RWM

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

R(RMS)

280

1.0

Average Rectified Output Current @T_L= 100°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

FSM

Forward Voltage

@I_F= 1.0A

1.10

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

5.0

200

µA

Reverse Recovery Time (Note 1)

2.5

µS

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Operating and Storage Temperature Range

ꢀ

°C/W

°C

STG

-65 to +175

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A,

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm²land area.

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