GS1D-T3

更新时间： 2024-11-01 22:48:47

品牌	Logo	应用领域
WTE		整流二极管光电二极管瞄准线
页数	文件大小	规格书
3页	50K
描述
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER

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中文翻译

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数据手册

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GS1D-T3 数据手册

WTE

PO WER SEMICONDUCTORS

GS1A – GS1M

1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER

Features

Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop

Surge Overload Rating to 30A Peak

Low Power Loss

Built-in Strain Relief

Plastic Case Material has UL Flammability

Classification Rating 94V-O

SMA/DO-214AC

Min

Mechanical Data

Dim

Max

2.90

4.60

1.60

0.305

5.28

2.44

0.203

1.52

Case: Molded Plastic

2.50

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

4.00

1.40

0.152

4.80

Weight: 0.064 grams (approx.)

2.00

0.051

0.76

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol

GS1A GS1B GS1D GS1G

GS1J

GS1K GS1M Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

1.0

Average Rectified Output Current @T_L= 100°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

1.10

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

5.0

200

µA

Reverse Recovery Time (Note 1)

t^rr

C^j

2.5

µS

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Operating and Storage Temperature Range

R^ꢀ^JL

T^j,T^STG

K/W

°C

-65 to +175

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A,

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm²land area.

GS1A – GS1M

1 of 3

12 3

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