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GS1DQ PDF预览

GS1DQ

更新时间: 2024-11-03 15:18:23
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 330K
描述
SMA

GS1DQ 数据手册

 浏览型号GS1DQ的Datasheet PDF文件第2页浏览型号GS1DQ的Datasheet PDF文件第3页浏览型号GS1DQ的Datasheet PDF文件第4页 
RoHS  
GS1AQ THRU GS1MQ  
COMPLIANT  
Surface Mount General Purpose Rectifier  
Features  
● Low profile package  
● Ideal for automated placement  
● Glass passivated chip junction  
● High forward surge capability  
● Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
● Part no. with suffix “Q” means AEC-Q101 qualified  
Typical Applications  
For use in general purpose rectification of power  
supplies, inverters, converters, and freewheeling diodes for  
consumer,automotive and telecommunication.  
Mechanical Data  
ackage: DO-214AC (SMA)  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, halogen-free  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Cathode line denotes the cathode end  
Polarity:  
(T =25Unless otherwise specified  
Maximum Ratings  
a
GS1AQ GS1BQ GS1DQ GS1GQ GS1JQ GS1KQ GS1MQ  
PARAMETER  
SYMBOL  
UNIT  
Device marking code  
GS1A  
50  
GS1B  
100  
70  
GS1D  
200  
GS1G  
400  
280  
400  
1.0  
GS1J  
600  
GS1K  
800  
GS1M  
1000  
700  
Repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
IO  
V
V
35  
140  
420  
560  
Maximum DC blocking voltage  
V
50  
100  
200  
600  
800  
1000  
Average rectified output current  
@60Hz sine wave, Resistance load, Ta (Fig.1)  
A
Surge(non-repetitive)forward current  
@ 60Hz Half-sine wave,1 cycle, Ta=25℃  
IFSM  
I2t  
A
40  
Current squared time  
@1ms≤t≤8.3ms TJ=25℃,Rating of per diode  
A2S  
6.64  
Storage temperature  
Junction temperature  
Tstg  
TJ  
-55~+175  
-55~+150  
-55 ~ +150  
-55 ~ +175  
T =25Unless otherwise specified)  
Electrical Characteristics  
a
TEST  
CONDITIONS  
GS1AQ GS1BQ GS1DQ GS1GQ GS1JQ GS1KQ GS1MQ  
PARAMETER  
SYMBOL  
UNIT  
Maximum instantaneous  
forward voltage drop per diode  
VF  
CJ  
V
IFM=1.0A  
1.1  
Typical junction capacitance  
pF  
4V,1 MHz  
16  
12  
5
Ta=25℃  
Maximum DC reverse current at  
rated DC blocking voltage per diode  
@ VRM=VRRM  
IRRM  
μA  
50  
T =125℃  
a
1 / 4  
S-S2075  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  
Rev.1.6,28-Jun-23  

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