Datasheet > GP10ME-E3/53

GP10ME-E3/53

更新时间： 2024-11-12 22:55:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	73K
描述
DIODE GEN PURP 1KV 1A DO204AL

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

GP10ME-E3/53 数据手册

GP10x

Vishay General Semiconductor

www.vishay.com

Glass Passivated Junction Plastic Rectifier

FEATURES

• Superectifier structure for high reliability

application

SUPERECTIFIER^®

• Cavity-free glass-passivated junction

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

DO-41 (DO-204AL)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes for consumer

applications.

PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

1.0 A

Case: DO-41 (DO-204AL), molded epoxy over glass body

V_RRM

50 V to 1600 V

30 A, 25 A

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

I_FSM

I_R

V_F

5.0 μA

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

1.1 V, 1.2 V, 1.3 V

175 °C

T_Jmax.

Package

DO-41 (DO-204AL)

Single

Polarity: color band denotes cathode end

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

UNIT

Maximum repetitive peak reverse voltage

V_RRM

50 to 1600 (fig. 5)

Maximum average forward rectified current

I_F(AV)

I_FSM

1.0

0.375" (9.5 mm) lead length (fig. 1)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

Maximum full load reverse current, full cycle

average, 0.375" (9.5 mm) lead length at T_A= 75 °C

I_R(AV)

μA

°C

Operating junction and storage temperature range

T_J, T_STG

-65 to +175

-65 to +150

Revision: 02-Jul-2020

Document Number: 88637

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

GP10ME-E3/53 替代型号

型号	品牌	替代类型	描述	数据表
GP10MEHE3/53	VISHAY	完全替代	DIODE GEN PURP 1KV 1A DO204AL
GP10MEHE3/54	VISHAY	类似代替	DIODE GEN PURP 1KV 1A DO204AL

与GP10ME-E3/53相关器件

型号	品牌	获取价格	描述	数据表
GP10ME-E3/54	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO204AL
GP10ME-E3/73	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO204AL
GP10MEHE3/53	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO204AL
GP10MEHE3/54	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO204AL
GP10MEHE3/73	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO204AL
GP10MH	ZOWIE	获取价格	SINTERED GLASS PASSIVATED JUNCTION RECTIFIER
GP10MHE3	VISHAY	获取价格	DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Sign
GP10M-HE3	VISHAY	获取价格	DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Sign
GP10MHE3/54	VISHAY	获取价格	STD RECOVERY RECTFR 1KV 1A 2PIN DO-204AL - Tape and Reel
GP10M-HE3/54	VISHAY	获取价格	DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN,

与GP10ME-E3/53相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

GP10ME-E3/53

GP10ME-E3/53 数据手册

GP10ME-E3/53 替代型号

与GP10ME-E3/53相关器件

与GP10ME-E3/53相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

GP10ME-E3/53

GP10ME-E3/53 数据手册

GP10ME-E3/53 替代型号

与GP10ME-E3/53相关器件

与GP10ME-E3/53相关文章

您还可以找

您在本页遇到什么问题？