Datasheet > GP10M-HE3

GP10M-HE3

更新时间： 2024-09-25 14:19:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	324K
描述
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signal Diode

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中文翻译

获取价格

技术参数
数据手册

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GP10M-HE3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-41
包装说明：	LEAD FREE, PLASTIC, DO-41, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.67
Is Samacsys：	N	Base Number Matches：	1

GP10M-HE3 数据手册

GP10A thru GP10Y

Vishay General Semiconductor

Glass Passivated Junction Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

I_R

1.0 A

50 V to 1600 V

30 A, 25 A

5.0 µA

V_F

1.1 V, 1.2 V, 1.3 V

175 °C

T_jmax.

* Glass-plastic encapsulation

technique is covered by

Patent No. 3,996,602,

DO-204AL (DO-41)

brazed-lead assembly

by Patent No. 3,930,306

Features

Mechanical Data

• Superectifier structure for High Reliability

application

Case: DO-204AL, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

• Cavity-free glass-passivated junction

• Low forward voltage drop

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• Low leakage current

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

For use in general purpose rectification of power sup-

plies, inverters, converters and freewheeling diodes

for both consumer and automotive applications

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol

V_RRM

Unit

Maximum repetitive peak reverse voltage

50 to 1600 V (See Fig. 5)

1.0

Maximum average forward rectified current 0.375"

(9.5 mm) lead length (See fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-

wave superimposed on rated load

I_FSM

Maximum full load reverse current, full cycle average,

0.375" (9.5 mm) lead lengths at T_A= 75 °C

I_R(AV)

µA

Operating junction and storage temperature range

T_J,T_STG

- 65 to + 175

- 65 to + 150

°C

Document Number 88637

14-Sep-05

www.vishay.com

12 3 4

中文翻译

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