是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DO-41 | 包装说明: | O-PALF-W2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
风险等级: | 5.65 | Is Samacsys: | N |
其他特性: | FREE WHEELING DIODE | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JEDEC-95代码: | DO-204AL |
JESD-30 代码: | O-PALF-W2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 最低工作温度: | -65 °C |
最大输出电流: | 1 A | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 1100 V | 最大反向恢复时间: | 3 µs |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GP10NB60S | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT | |
GP10NB60SD | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH TM IGBT | |
GP10NB60SFP | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT | |
GP10NC60H | STMICROELECTRONICS |
获取价格 |
N-channel 10A - 600V - TO-220 Very fast PowerMESH TM IGBT | |
GP10NC60HD | STMICROELECTRONICS |
获取价格 |
N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH TM IGBT | |
GP10NC60K | STMICROELECTRONICS |
获取价格 |
N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH TM IGBT | |
GP10NC60KD | STMICROELECTRONICS |
获取价格 |
N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT | |
GP10NE | VISHAY |
获取价格 |
GP10NE, D204-2 | |
GP10N-E3/54 | VISHAY |
获取价格 |
DIODE GEN PURP 1.1KV 1A DO204AL | |
GP10N-E3/73 | VISHAY |
获取价格 |
DIODE 1 A, 1100 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, |