品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | 双极性晶体管 | |
页数 | 文件大小 | 规格书 |
13页 | 392K | |
描述 | ||
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GP10NC60H | STMICROELECTRONICS |
获取价格 |
N-channel 10A - 600V - TO-220 Very fast PowerMESH TM IGBT | |
GP10NC60HD | STMICROELECTRONICS |
获取价格 |
N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH TM IGBT | |
GP10NC60K | STMICROELECTRONICS |
获取价格 |
N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH TM IGBT | |
GP10NC60KD | STMICROELECTRONICS |
获取价格 |
N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT | |
GP10NE | VISHAY |
获取价格 |
GP10NE, D204-2 | |
GP10N-E3/54 | VISHAY |
获取价格 |
DIODE GEN PURP 1.1KV 1A DO204AL | |
GP10N-E3/73 | VISHAY |
获取价格 |
DIODE 1 A, 1100 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, | |
GP10NHE3 | VISHAY |
获取价格 |
DIODE 1 A, 1100 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Sign | |
GP10NHE3/54 | VISHAY |
获取价格 |
DIODE GEN PURP 1.1KV 1A DO204AL | |
GP10N-HE3/54 | VISHAY |
获取价格 |
DIODE 1 A, 1100 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, |