Datasheet > GP10NC60KD

GP10NC60KD

更新时间： 2024-09-26 04:19:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
17页	380K
描述
N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT

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中文翻译

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数据手册

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GP10NC60KD 数据手册

STGB10NC60KD

STGF10NC60KD - STGP10NC60KD

N-channel 600V - 10A - D²PAK / TO-220 / TO-220FP

Short circuit rated PowerMESH™ IGBT

General features

Max

@25°C

CE(sat)

Type

CES

@100°C

STGB10NC60KD 600V

STGP10NC60KD 600V

STGF10NC60KD 600V

<2.5V

10A

TO-220

TO-220FP

■ Lower on voltage drop (V

)

cesat

■ Lower C

/ C

ratio (no cross-conduction

IES

RES

susceptibility)

■ Very soft ultra fast recovery antiparallel diode

■ Short circuit withstand time 10µs

D PAK

Description

Internal schematic diagram

Using the latest high voltage technology based on

a patented strip layout, STMicroelectronics has

designed an advaced family of IGBTs, the

PowerMESH™ IGBTs, with outstanding

performances. The suffix “K” identifies a family

optimized for high frequency motor control

applications with short circuit withstand capability.

Applications

■ High frequency motor controls

■ SMPS and PFC in both hard switch and

resonant topologies

■ Motor drivers

Order codes

Sales Type

Marking

Package

Packaging

STGB10NC60KDT4

STGP10NC60KD

STGF10NC60KD

GB10NC60KD

GP10NC60KD

GF10NC60KD

D²PAK

TO-220

Tape & reel

Tube

TO-220FP

Tube

March 2006

Rev 4

1/17

www.st.com

12 3 4 5 6 7...17

中文翻译

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