Datasheet > GP10NB60SD

GP10NB60SD

更新时间： 2024-09-25 04:19:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
12页	245K
描述
N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH TM IGBT

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中文翻译

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数据手册

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GP10NB60SD 数据手册

STGP10NB60SD

N-CHANNEL 10A - 600V - TO-220

Low Drop PowerMESH™ IGBT

General features

CE(sat)

Type

CES

(Max)@ 25°C @100°C

STGP10NB60SD 600V

< 1.7V 10A

■ HIGH CURRENT CAPABILITY

■ HIGH INPUT IMPEDANCE (VOLTAGE

DRIVEN)

TO-220

Description

Using the latest high voltage technology based on

a patented strip layout, STMicroelectronics has

Internal schematic diagram

designed an advanced family of IGBTs, the

™

PowerMESH

IGBTs,

with

outstanding

performances. The suffix "S" identifies a family

optimized achieve minimum on-voltage drop for

low frequency application (<1kHz).

Applications

■ LIGHT DIMMER

■ STATIC RELAYS

■ MOTOR CONTROL

Order codes

Sales Type

Marking

Package

Packaging

STGP10NB60SD

GP10NB60SD

TO-220

TUBE

Rev 1

1/12

November 2005

www.st.com

12 3 4 5 6 7...12

中文翻译

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与GP10NB60SD相关器件

型号	品牌	获取价格	描述	数据表
GP10NB60SFP	STMICROELECTRONICS	获取价格	N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT
GP10NC60H	STMICROELECTRONICS	获取价格	N-channel 10A - 600V - TO-220 Very fast PowerMESH TM IGBT
GP10NC60HD	STMICROELECTRONICS	获取价格	N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH TM IGBT
GP10NC60K	STMICROELECTRONICS	获取价格	N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH TM IGBT
GP10NC60KD	STMICROELECTRONICS	获取价格	N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT
GP10NE	VISHAY	获取价格	GP10NE, D204-2
GP10N-E3/54	VISHAY	获取价格	DIODE GEN PURP 1.1KV 1A DO204AL
GP10N-E3/73	VISHAY	获取价格	DIODE 1 A, 1100 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN,
GP10NHE3	VISHAY	获取价格	DIODE 1 A, 1100 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Sign
GP10NHE3/54	VISHAY	获取价格	DIODE GEN PURP 1.1KV 1A DO204AL