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GM71V65163AT-5 PDF预览

GM71V65163AT-5

更新时间: 2024-02-06 08:30:14
品牌 Logo 应用领域
其他 - ETC 动态存储器
页数 文件大小 规格书
24页 397K
描述
x16 EDO Page Mode DRAM

GM71V65163AT-5 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:TSOP, TSOP50,.46,32Reach Compliance Code:compliant
风险等级:5.82最长访问时间:50 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G50
JESD-609代码:e0内存密度:67108864 bit
内存集成电路类型:EDO DRAM内存宽度:16
端子数量:50字数:4194304 words
字数代码:4000000最高工作温度:70 °C
最低工作温度:组织:4MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP封装等效代码:TSOP50,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
电源:3.3 V认证状态:Not Qualified
刷新周期:4096自我刷新:NO
最大待机电流:0.0005 A子类别:DRAMs
最大压摆率:0.2 mA标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUALBase Number Matches:1

GM71V65163AT-5 数据手册

 浏览型号GM71V65163AT-5的Datasheet PDF文件第3页浏览型号GM71V65163AT-5的Datasheet PDF文件第4页浏览型号GM71V65163AT-5的Datasheet PDF文件第5页浏览型号GM71V65163AT-5的Datasheet PDF文件第7页浏览型号GM71V65163AT-5的Datasheet PDF文件第8页浏览型号GM71V65163AT-5的Datasheet PDF文件第9页 
GM71V65163A  
GM71VS65163AL  
LG Semicon  
Write Cycles  
Symbol  
GM71V(S)65163A/AL-5 GM71V(S)65163A/AL-6  
Notes  
Parameter  
Unit  
Min  
0
Min  
0
Max  
Max  
-
-
-
-
-
14,21  
§À  
t
WCS  
WCH  
WP  
RWL  
CWL  
Write Command Set-up Time  
Write Command Hold Time  
Write Command Pulse Width  
Write Command to RAS Lead Time  
8
10  
10  
17  
10  
0
-
-
-
-
-
-
§À 21  
§À  
t
8
t
13  
8
§À  
t
-
-
§À 23  
t
Write Command to CAS Lead Time  
Data-in Set-up Time  
15,23  
0
§À  
§À  
t
DS  
15,23  
10  
8
-
Data-in Hold Time  
tDH  
Read-Modify-Write Cycles  
GM71V(S)65163A/AL-5  
GM71V(S)65163A/AL-6  
Notes  
Parameter  
Symbol  
Unit  
Min  
116  
67  
Min  
Max  
Max  
140  
-
-
-
-
-
-
Read-Modify-Write Cycle Time  
§À  
§À  
§À  
§À  
§À  
t
RWC  
RWD  
CWD  
AWD  
OEH  
79  
34  
49  
15  
-
-
14  
14  
t
RAS to WE Delay Time  
30  
t
CAS to WE Delay Time  
42  
14  
-
-
t
Column Address to WE Delay Time  
OE Hold Time from WE  
13  
t
Refresh Cycles  
GM71V(S)65163A/AL-5 GM71V(S)65163A/AL-6  
Notes  
Symbol  
Unit  
Parameter  
Min  
Min  
Max  
Max  
CAS Set-up Time  
(CAS-before-RAS Refresh Cycle)  
§À  
-
-
5
21  
22  
t
CSR  
5
CAS Hold Time  
(CAS-before-RAS Refresh Cycle)  
8
0
-
-
-
-
10  
0
§À  
§À  
t
CHR  
WRP  
WE setup time  
(CAS-before-RAS Refresh Cycle)  
t
WE hold time  
(CAS-before-RAS Refresh Cycle)  
§À  
§À  
8
5
-
-
10  
5
-
-
t
WRH  
RPC  
21  
RAS Precharge to CAS Hold Time  
t
6

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