Datasheet > GM71V65800CJ-6

GM71V65800CJ-6

更新时间： 2024-11-06 23:53:51

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
9页	93K
描述
x8 Fast Page Mode DRAM

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GM71V65800CJ-6 数据手册

GM71V65800C

8,388,608 WORDS x 8 BIT

CMOS DYNAMIC RAM

Description

Pin Configuration

32 SOJ / TSOP II

The GM71V65800C is the second generation

dynamic RAM organized 8,388,608 words by 8

bits. The GM71V65800C utilizes 0.35um

CMOS Silicon Gate Process Technology as well

as advanced circuit techniques for wide

operating margins, both internally and to the

system user. System oriented features include

single power supply of 3.3V+/- 0.3V tolerance,

direct interfacing capability with high

performance logic families such as Schottky

TTL.

I/O7

I/O6

I/O5

I/O4

I/O0

I/O1

I/O2

I/O3

CAS

RAS

The GM71V65800C offers Fast Page Mode as

a high speed access mode.

A11

22 A10

Features

• 8,388,604 Words x 8 Bit

• Fast Page Mode Capability

• Fast Access Time & Cycle Time

(Unit: ns)

RAC

CAC

(Top View)

110

130

GM71V65800C-5

GM71V65800C-6

GM71V65800C-7

• Low Power

- Active : 522 mW / 450 mW / 360 mW (MAX)

- Standby : 3.6 mW ( CMOS level :MAX )

• RAS Only Refresh, CAS before RAS Refresh,

Hidden Refresh Capability

• LVTTL

• 4096 Refresh Cycles/64 ms

• Single Power Supply of 3.3V+/- 0.3V

with a built-in VBB generator

* This Data Sheet is subject to change without notice.

Rev 0.1 / Apr’01

12 3 4 5 6 7...9

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