Datasheet > GM71V65803C(CL)

GM71V65803C(CL)

更新时间： 2024-09-18 23:53:51

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
11页	121K
描述
8Mx8\|3.3V\|4K\|5/6\|FP/EDO DRAM - 64M

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数据手册

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GM71V65803C(CL) 数据手册

G M 71V 65803C

G M 71V S65803CL

8,388,608 WORDS x 8 BIT

CMOS DYNAMIC RAM

D escription

Pin Configuration

32 SOJ / TSOP II

T h e GM 71V ( S)65803C/ C L i s t h e n e w

generation dynamic RA M organized 8,388,608

w o r d s by 8bits. T h e GM 71V (S)65803C/ CL

utilizes advanced CM O S Silicon Gate Process

Technology as w ell as advanced circuit

techniques for w ide operating margins, both

i n t er n al l y and to the system u ser . Sy st em

oriented features include single pow er supply of

3.3V + / -10% tolerance, d i r ect i n t erfacing

capability w ith high performance logic families

such as Schottky TTL.

VSS

IO7

VCC

IO0

IO1

IO2

IO3

IO6

IO5

IO4

VSS

VCC

/CAS

The GM 71V (S)65803C/ CL offers Extended

Data Out (EDO) M ode as a high speed access

mode.

/OE

/WE

/RAS

24 NC

23 A11

22 A10

Features

* 8,388,608 Words x 8 Bit

* Extended Data Out (EDO) M ode Capability

* Fast A ccess Tim e & Cycle Tim e

(Unit: ns)

RAC

A A

CAC

H PC

18 A6

VSS

G M 71V (S)65803C/ CL-5

G M 71V (S)65803C/ CL-6

VCC

104

(Top View)

*Pow er dissipation

- A ctive : 522m W / 486mW(M A X)

- Standby : 1.8 mW ( CM OS level : M A X )

0.54mW ( L-Version : M A X)

*EDO page mode capability

*A ccess tim e : 50ns/ 60ns (m ax)

*Refresh cycles

- RA S only Refresh

4096 cycles/ 64 m s (GM 71V65803C)

4096 cycles/ 128m s (GM 71V S65803CL)(L_Version)

*CBR & H idden Refresh

4096 cycles/ 64 m s (GM 71V65803C)

4096 cycles/ 128 m s (GM 71VS65803CL)( L-Version )

*4 variations of refresh

-RA S-only refresh

-CA S-before-RA S refresh

-H idden refresh

-Self refresh (L-V ersion)

*Single Pow er Supply of 3.3V+/ -10 % with a built-in VBB generator

*Battery Back Up Operation ( L-Version )

Rev 0.1 / Apr’01

12 3 4 5 6 7...11

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